Electronic structure of CsBi4Te6

P. Larson, S. D. Mahanti, D. Y. Chung, M. G. Kanatzidis

Research output: Contribution to journalConference articlepeer-review


Recently, CsBi4Te6 has been reported as a high-performance thermoelectric material for low temperature applications with a higher thermoelectric figure of merit (ZT ∼ 0.8 at 225 Kelvin) than conventional Bi2-xSbxTe3-ySey alloys at the same temperature. First-principle electronic structure calculations within density functional theory performed on this material give an indirect narrow-gap semiconductor. Dispersions of energy bands along different directions in k-space display large anisotropy and multiple conduction band minima close in energy, characteristics of a good thermoelectric material.

Original languageEnglish
Pages (from-to)Z621-Z626
JournalProceedings - IEEE International Symposium on Circuits and Systems
Publication statusPublished - Jan 1 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electronic structure of CsBi<sub>4</sub>Te<sub>6</sub>'. Together they form a unique fingerprint.

Cite this