Electronic structure of CsBi4Te6

P. Larson, S. D. Mahanti, D. Y. Chung, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently, CsBi4Te6 has been reported as a high-performance thermoelectric material for low temperature applications with a higher thermoelectric figure of merit (ZT ∼ 0.8 at 225 Kelvin) than conventional Bi2-xSbxTe3-ySey alloys at the same temperature. First-principle electronic structure calculations within density functional theory performed on this material give an indirect narrow-gap semiconductor. Dispersions of energy bands along different directions in k-space display large anisotropy and multiple conduction band minima close in energy, characteristics of a good thermoelectric material.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

Other

OtherIEEE International Symposium on Circuits and Systems (ISCAS 2001)
CountryAustralia
CitySydney, NSW
Period5/6/015/9/01

Fingerprint

Electronic structure
Conduction bands
Dispersions
Band structure
Density functional theory
Anisotropy
Semiconductor materials
Temperature
Direction compound

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Larson, P., Mahanti, S. D., Chung, D. Y., & Kanatzidis, M. G. (2001). Electronic structure of CsBi4Te6. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 4)

Electronic structure of CsBi4Te6. / Larson, P.; Mahanti, S. D.; Chung, D. Y.; Kanatzidis, Mercouri G.

Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Larson, P, Mahanti, SD, Chung, DY & Kanatzidis, MG 2001, Electronic structure of CsBi4Te6. in Proceedings - IEEE International Symposium on Circuits and Systems. vol. 4, IEEE International Symposium on Circuits and Systems (ISCAS 2001), Sydney, NSW, Australia, 5/6/01.
Larson P, Mahanti SD, Chung DY, Kanatzidis MG. Electronic structure of CsBi4Te6. In Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4. 2001
Larson, P. ; Mahanti, S. D. ; Chung, D. Y. ; Kanatzidis, Mercouri G. / Electronic structure of CsBi4Te6. Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.
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