Electronic structure of CsBi4Te6

A high-performance thermoelectric at low temperatures

P. Larson, S. D. Mahanti, D. Y. Chung, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Recently, a novel narrow-gap semiconductor CsBi4Te6 has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, Bi2Te3 and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped CsBi4Te6.

Original languageEnglish
Article number045205
Pages (from-to)452051-452055
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number4
Publication statusPublished - Jan 15 2002

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Bismuth
Electronic structure
Charge transfer
Thermal conductivity
Display devices
Semiconductor materials
electronic structure
display devices
figure of merit
bismuth
thermal conductivity
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic structure of CsBi4Te6 : A high-performance thermoelectric at low temperatures. / Larson, P.; Mahanti, S. D.; Chung, D. Y.; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 4, 045205, 15.01.2002, p. 452051-452055.

Research output: Contribution to journalArticle

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