Abstract
Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 1 2002 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Electronic structure of (formula presented) : A high-performance thermoelectric at low temperatures. / Larson, P.; Mahanti, S. D.; Chung, D. Y.; Kanatzidis, Mercouri G.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 4, 01.01.2002, p. 1-5.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electronic structure of (formula presented)
T2 - A high-performance thermoelectric at low temperatures
AU - Larson, P.
AU - Mahanti, S. D.
AU - Chung, D. Y.
AU - Kanatzidis, Mercouri G
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).
AB - Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).
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UR - http://www.scopus.com/inward/citedby.url?scp=85038324867&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.65.045205
DO - 10.1103/PhysRevB.65.045205
M3 - Article
VL - 65
SP - 1
EP - 5
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 4
ER -