Electronic structure of (formula presented)

A high-performance thermoelectric at low temperatures

P. Larson, S. D. Mahanti, D. Y. Chung, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number4
DOIs
Publication statusPublished - Jan 1 2002

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Bismuth
Electronic structure
Charge transfer
Thermal conductivity
Display devices
Semiconductor materials
electronic structure
display devices
figure of merit
Temperature
bismuth
thermal conductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electronic structure of (formula presented) : A high-performance thermoelectric at low temperatures. / Larson, P.; Mahanti, S. D.; Chung, D. Y.; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 4, 01.01.2002, p. 1-5.

Research output: Contribution to journalArticle

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