Electronic structure of (formula presented): A high-performance thermoelectric at low temperatures

P. Larson; S. D. Mahanti; D. Y. Chung; Mercouri G Kanatzidis

doi:10.1103/PhysRevB.65.045205

Electronic structure of (formula presented): A high-performance thermoelectric at low temperatures

P. Larson, S. D. Mahanti, D. Y. Chung, Mercouri G Kanatzidis

Northwestern University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.65.045205
Publication status	Published - Jan 1 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{9b124b594d6c4fccbcf06d37a1637b5c,

title = "Electronic structure of (formula presented): A high-performance thermoelectric at low temperatures",

abstract = "Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).",

author = "P. Larson and Mahanti, {S. D.} and Chung, {D. Y.} and Kanatzidis, {Mercouri G}",

year = "2002",

month = jan,

day = "1",

doi = "10.1103/PhysRevB.65.045205",

language = "English",

volume = "65",

pages = "1--5",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Electronic structure of (formula presented)

T2 - A high-performance thermoelectric at low temperatures

AU - Larson, P.

AU - Mahanti, S. D.

AU - Chung, D. Y.

AU - Kanatzidis, Mercouri G

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).

AB - Recently, a novel narrow-gap semiconductor (formula presented) has been discovered with greater potential for low-temperature applications than the best existing high-performance thermoelectrics, (formula presented) and its alloys. Electronic structure calculations in this bulk system display reduced dimensionality of hole transport whose origin can be traced to the presence of Bi-Bi bonds (instead of Bi-Te and Te-Te bonds), unique for bismuth chalcogenide systems. This reduced dimensionality of charge transport along with the low thermal conductivity of this compound can explain the observed large thermoelectric figure of merit ZT in hole doped (formula presented).

UR - http://www.scopus.com/inward/record.url?scp=85038324867&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038324867&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.65.045205

DO - 10.1103/PhysRevB.65.045205

M3 - Article

AN - SCOPUS:85038324867

VL - 65

SP - 1

EP - 5

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

ER -

Electronic structure of (formula presented): A high-performance thermoelectric at low temperatures

Abstract

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