Electronic structure of TmSe

H. J F Jansen, Arthur J Freeman, R. Monnier

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Total energy local density functional electronic structure calculations versus volume were performed for TmSe. Our calculated ground state properties agree very well with experiment. Self-interaction corrections for the localized 4f-electrons are small. The mixed-valent transition is related to the closing of the gap between the f-band and the conduction d-band.

Original languageEnglish
Pages (from-to)459-461
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume47-48
Issue numberC
DOIs
Publication statusPublished - 1985

Fingerprint

Electron transitions
Ground state
Electronic structure
electronic structure
Electrons
closing
Experiments
conduction
ground state
electrons
interactions
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic structure of TmSe. / Jansen, H. J F; Freeman, Arthur J; Monnier, R.

In: Journal of Magnetism and Magnetic Materials, Vol. 47-48, No. C, 1985, p. 459-461.

Research output: Contribution to journalArticle

Jansen, H. J F ; Freeman, Arthur J ; Monnier, R. / Electronic structure of TmSe. In: Journal of Magnetism and Magnetic Materials. 1985 ; Vol. 47-48, No. C. pp. 459-461.
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