Electronic structure, phase stability, and semimetal-semiconductor transitions in Bi

A. B. Shick, J. B. Ketterson, D. L. Novikov, Arthur J Freeman

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The structural stability of bulk Bi is studied using the local-density full-potential linear muffin-tin orbital method. The effect of both the trigonal shear angle and internal displacement on the electronic structure is determined. It is shown that the internal displacement changes the Bi electronic structure from a metal to a semimetal, in qualitative agreement with a Jones-Peierls-type transition. The total energy is calculated to have a double-well dependence on the internal displacement, and to provide a stabilization of the trigonal phase. We show that an increase of trigonal shear angle (towards the cubic value of 60°) leads to a semimetal-semiconductor transition in Bi. Using coherency strain arising from a film/substrate lattice constant mismatch, this may provide a way to induce semiconducting behavior in Bi films, and with it to control their thermoelectric properties.

Original languageEnglish
Pages (from-to)15484-15487
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number23
Publication statusPublished - Dec 15 1999

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Metalloids
Phase stability
metalloids
Electron transitions
Electronic structure
Semiconductor materials
electronic structure
Tin
shear
Lattice constants
Stabilization
Metals
structural stability
tin
Substrates
stabilization
orbitals
metals
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic structure, phase stability, and semimetal-semiconductor transitions in Bi. / Shick, A. B.; Ketterson, J. B.; Novikov, D. L.; Freeman, Arthur J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 23, 15.12.1999, p. 15484-15487.

Research output: Contribution to journalArticle

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