Abstract
The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulfide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending-assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of FL MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias.
| Original language | English |
|---|---|
| Pages (from-to) | 2508-2513 |
| Number of pages | 6 |
| Journal | Journal of Physical Chemistry Letters |
| Volume | 4 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Aug 1 2013 |
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Keywords
- MoS
- nanoelectronics
- scanning photocurrent microscopy
- transition metal dichalcogenides
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy. / Wu, Chung Chiang; Jariwala, Deep; Sangwan, Vinod K.; Marks, Tobin J; Hersam, Mark C; Lauhon, Lincoln J.
In: Journal of Physical Chemistry Letters, Vol. 4, No. 15, 01.08.2013, p. 2508-2513.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy
AU - Wu, Chung Chiang
AU - Jariwala, Deep
AU - Sangwan, Vinod K.
AU - Marks, Tobin J
AU - Hersam, Mark C
AU - Lauhon, Lincoln J.
PY - 2013/8/1
Y1 - 2013/8/1
N2 - The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulfide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending-assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of FL MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias.
AB - The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulfide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending-assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of FL MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias.
KW - MoS
KW - nanoelectronics
KW - scanning photocurrent microscopy
KW - transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=84881303838&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84881303838&partnerID=8YFLogxK
U2 - 10.1021/jz401199x
DO - 10.1021/jz401199x
M3 - Article
AN - SCOPUS:84881303838
VL - 4
SP - 2508
EP - 2513
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
SN - 1948-7185
IS - 15
ER -