Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Research output: Contribution to journalReview article

1471 Citations (Scopus)

Abstract

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

Original languageEnglish
Pages (from-to)1102-1120
Number of pages19
JournalACS nano
Volume8
Issue number2
DOIs
Publication statusPublished - Feb 25 2014

Keywords

  • digital electronics
  • field-effect transistor
  • flexible electronics
  • light-emitting diode
  • molybdenum disulfide
  • nanoelectronics
  • optoelectronics
  • photodetector
  • photovoltaic
  • sensor
  • solar cell
  • valleytronics
  • van der Waals heterostructure

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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