We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.
|Number of pages||7|
|Publication status||Published - Dec 1 2004|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: Oct 3 2004 → Oct 8 2004
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||10/3/04 → 10/8/04|
ASJC Scopus subject areas