Emitter-base design tradeoffs in 120GHZ sige HBTs

A. Joseph, X. Liu, P. Geiss, M. Slusser, W. Hodge, Michel Dupuis, R. Wuthrich, J. Nakos, J. Dunn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsD. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack
Pages45-51
Number of pages7
Volume7
Publication statusPublished - 2004
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

Fingerprint

Heterojunction bipolar transistors
Noise abatement
Doping (additives)

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Joseph, A., Liu, X., Geiss, P., Slusser, M., Hodge, W., Dupuis, M., ... Dunn, J. (2004). Emitter-base design tradeoffs in 120GHZ sige HBTs. In D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T-J. King, G. Masini, J. Murota, K. Rim, ... B. Tillack (Eds.), Proceedings - Electrochemical Society (Vol. 7, pp. 45-51). [2.4]

Emitter-base design tradeoffs in 120GHZ sige HBTs. / Joseph, A.; Liu, X.; Geiss, P.; Slusser, M.; Hodge, W.; Dupuis, Michel; Wuthrich, R.; Nakos, J.; Dunn, J.

Proceedings - Electrochemical Society. ed. / D. Harame; J. Boquet; J. Cressler; D. Houghton; H. Iwai; T.-J. King; G. Masini; J. Murota; K. Rim; B. Tillack. Vol. 7 2004. p. 45-51 2.4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Joseph, A, Liu, X, Geiss, P, Slusser, M, Hodge, W, Dupuis, M, Wuthrich, R, Nakos, J & Dunn, J 2004, Emitter-base design tradeoffs in 120GHZ sige HBTs. in D Harame, J Boquet, J Cressler, D Houghton, H Iwai, T-J King, G Masini, J Murota, K Rim & B Tillack (eds), Proceedings - Electrochemical Society. vol. 7, 2.4, pp. 45-51, SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States, 10/3/04.
Joseph A, Liu X, Geiss P, Slusser M, Hodge W, Dupuis M et al. Emitter-base design tradeoffs in 120GHZ sige HBTs. In Harame D, Boquet J, Cressler J, Houghton D, Iwai H, King T-J, Masini G, Murota J, Rim K, Tillack B, editors, Proceedings - Electrochemical Society. Vol. 7. 2004. p. 45-51. 2.4
Joseph, A. ; Liu, X. ; Geiss, P. ; Slusser, M. ; Hodge, W. ; Dupuis, Michel ; Wuthrich, R. ; Nakos, J. ; Dunn, J. / Emitter-base design tradeoffs in 120GHZ sige HBTs. Proceedings - Electrochemical Society. editor / D. Harame ; J. Boquet ; J. Cressler ; D. Houghton ; H. Iwai ; T.-J. King ; G. Masini ; J. Murota ; K. Rim ; B. Tillack. Vol. 7 2004. pp. 45-51
@inproceedings{1e980bf425634f8fa16278a11b611707,
title = "Emitter-base design tradeoffs in 120GHZ sige HBTs",
abstract = "We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.",
author = "A. Joseph and X. Liu and P. Geiss and M. Slusser and W. Hodge and Michel Dupuis and R. Wuthrich and J. Nakos and J. Dunn",
year = "2004",
language = "English",
volume = "7",
pages = "45--51",
editor = "D. Harame and J. Boquet and J. Cressler and D. Houghton and H. Iwai and T.-J. King and G. Masini and J. Murota and K. Rim and B. Tillack",
booktitle = "Proceedings - Electrochemical Society",

}

TY - GEN

T1 - Emitter-base design tradeoffs in 120GHZ sige HBTs

AU - Joseph, A.

AU - Liu, X.

AU - Geiss, P.

AU - Slusser, M.

AU - Hodge, W.

AU - Dupuis, Michel

AU - Wuthrich, R.

AU - Nakos, J.

AU - Dunn, J.

PY - 2004

Y1 - 2004

N2 - We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.

AB - We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.

UR - http://www.scopus.com/inward/record.url?scp=17044411776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044411776&partnerID=8YFLogxK

M3 - Conference contribution

VL - 7

SP - 45

EP - 51

BT - Proceedings - Electrochemical Society

A2 - Harame, D.

A2 - Boquet, J.

A2 - Cressler, J.

A2 - Houghton, D.

A2 - Iwai, H.

A2 - King, T.-J.

A2 - Masini, G.

A2 - Murota, J.

A2 - Rim, K.

A2 - Tillack, B.

ER -