Emitter-base design tradeoffs in 120GHZ sige HBTs

A. Joseph, X. Liu, P. Geiss, M. Slusser, W. Hodge, M. Dupuis, R. Wuthrich, J. Nakos, J. Dunn

Research output: Contribution to conferencePaper

Abstract

We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.

Original languageEnglish
Pages45-51
Number of pages7
Publication statusPublished - Dec 1 2004
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Joseph, A., Liu, X., Geiss, P., Slusser, M., Hodge, W., Dupuis, M., Wuthrich, R., Nakos, J., & Dunn, J. (2004). Emitter-base design tradeoffs in 120GHZ sige HBTs. 45-51. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.