Energetics and Kinetics of Interfacial Electron-Transfer processes at Chemically Modified InP/Liquid Junctions

Nicholas Prokopuk, Nathan S Lewis

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electrochemical behavior of freshly etched (111)B-oriented InP surfaces was compared to that of (111)B-oriented InP surfaces that had been chemically modified by reaction with p-BrCH2C6H4CF 3. Differential capacitance versus potential and current density versus potential techniques were used to measure the energetics and kinetics of interfacial electron-transfer reactions in contact with a 70:30 (v:v) mixture of CH3CN-tetrahydrofuran that contained either 1,1′- dimethylferrrocene+/0 or decamethylferrocene+/0. For both the etched and modified (111)B InP contacts, plots of differential capacitance versus potential measurements indicated a linear dependence of the equilibrium voltage drop (Vbi) in the semiconductor space-charge region, as a function of the redox potential (e(A/A-)) of the solution, with the slope of Vbi vs E(A/A-) ≈ 1.0, as expected for ideal behavior of a semiconductor/liquid junction. The barrier heights calculated for the chemically modified InP/liquid junctions were 100 ± 20 mV higher than the barrier heights of freshly etched, unmodified (111)B InP surfaces in contact with the same electrolyte solutions. The higher barrier heights of the chemically modified surfaces are consistent with a shift in the InP band-edge energies induced by the surface modification process. The modified and etched surfaces both displayed interfacial electron-transfer kinetics that were first order in the concentration of acceptors in solution and first order in the concentration of electrons at the semiconductor surface. The interfacial electron-transfer rate constants for these systems were determined to be ∼10-17-10-18 cm4 s-1.

Original languageEnglish
Pages (from-to)4449-4456
Number of pages8
JournalJournal of Physical Chemistry B
Volume108
Issue number14
Publication statusPublished - Apr 8 2004

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electron transfer
Kinetics
Electrons
kinetics
Liquids
liquids
Semiconductor materials
Capacitance
capacitance
Electric space charge
Contacts (fluid mechanics)
Electrolytes
tetrahydrofuran
Surface treatment
Rate constants
Current density
space charge
plots
electrolytes
current density

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Energetics and Kinetics of Interfacial Electron-Transfer processes at Chemically Modified InP/Liquid Junctions. / Prokopuk, Nicholas; Lewis, Nathan S.

In: Journal of Physical Chemistry B, Vol. 108, No. 14, 08.04.2004, p. 4449-4456.

Research output: Contribution to journalArticle

@article{0777f63cd64942f995f2ed2eebd40a30,
title = "Energetics and Kinetics of Interfacial Electron-Transfer processes at Chemically Modified InP/Liquid Junctions",
abstract = "The electrochemical behavior of freshly etched (111)B-oriented InP surfaces was compared to that of (111)B-oriented InP surfaces that had been chemically modified by reaction with p-BrCH2C6H4CF 3. Differential capacitance versus potential and current density versus potential techniques were used to measure the energetics and kinetics of interfacial electron-transfer reactions in contact with a 70:30 (v:v) mixture of CH3CN-tetrahydrofuran that contained either 1,1′- dimethylferrrocene+/0 or decamethylferrocene+/0. For both the etched and modified (111)B InP contacts, plots of differential capacitance versus potential measurements indicated a linear dependence of the equilibrium voltage drop (Vbi) in the semiconductor space-charge region, as a function of the redox potential (e(A/A-)) of the solution, with the slope of Vbi vs E(A/A-) ≈ 1.0, as expected for ideal behavior of a semiconductor/liquid junction. The barrier heights calculated for the chemically modified InP/liquid junctions were 100 ± 20 mV higher than the barrier heights of freshly etched, unmodified (111)B InP surfaces in contact with the same electrolyte solutions. The higher barrier heights of the chemically modified surfaces are consistent with a shift in the InP band-edge energies induced by the surface modification process. The modified and etched surfaces both displayed interfacial electron-transfer kinetics that were first order in the concentration of acceptors in solution and first order in the concentration of electrons at the semiconductor surface. The interfacial electron-transfer rate constants for these systems were determined to be ∼10-17-10-18 cm4 s-1.",
author = "Nicholas Prokopuk and Lewis, {Nathan S}",
year = "2004",
month = "4",
day = "8",
language = "English",
volume = "108",
pages = "4449--4456",
journal = "Journal of Physical Chemistry B Materials",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "14",

}

TY - JOUR

T1 - Energetics and Kinetics of Interfacial Electron-Transfer processes at Chemically Modified InP/Liquid Junctions

AU - Prokopuk, Nicholas

AU - Lewis, Nathan S

PY - 2004/4/8

Y1 - 2004/4/8

N2 - The electrochemical behavior of freshly etched (111)B-oriented InP surfaces was compared to that of (111)B-oriented InP surfaces that had been chemically modified by reaction with p-BrCH2C6H4CF 3. Differential capacitance versus potential and current density versus potential techniques were used to measure the energetics and kinetics of interfacial electron-transfer reactions in contact with a 70:30 (v:v) mixture of CH3CN-tetrahydrofuran that contained either 1,1′- dimethylferrrocene+/0 or decamethylferrocene+/0. For both the etched and modified (111)B InP contacts, plots of differential capacitance versus potential measurements indicated a linear dependence of the equilibrium voltage drop (Vbi) in the semiconductor space-charge region, as a function of the redox potential (e(A/A-)) of the solution, with the slope of Vbi vs E(A/A-) ≈ 1.0, as expected for ideal behavior of a semiconductor/liquid junction. The barrier heights calculated for the chemically modified InP/liquid junctions were 100 ± 20 mV higher than the barrier heights of freshly etched, unmodified (111)B InP surfaces in contact with the same electrolyte solutions. The higher barrier heights of the chemically modified surfaces are consistent with a shift in the InP band-edge energies induced by the surface modification process. The modified and etched surfaces both displayed interfacial electron-transfer kinetics that were first order in the concentration of acceptors in solution and first order in the concentration of electrons at the semiconductor surface. The interfacial electron-transfer rate constants for these systems were determined to be ∼10-17-10-18 cm4 s-1.

AB - The electrochemical behavior of freshly etched (111)B-oriented InP surfaces was compared to that of (111)B-oriented InP surfaces that had been chemically modified by reaction with p-BrCH2C6H4CF 3. Differential capacitance versus potential and current density versus potential techniques were used to measure the energetics and kinetics of interfacial electron-transfer reactions in contact with a 70:30 (v:v) mixture of CH3CN-tetrahydrofuran that contained either 1,1′- dimethylferrrocene+/0 or decamethylferrocene+/0. For both the etched and modified (111)B InP contacts, plots of differential capacitance versus potential measurements indicated a linear dependence of the equilibrium voltage drop (Vbi) in the semiconductor space-charge region, as a function of the redox potential (e(A/A-)) of the solution, with the slope of Vbi vs E(A/A-) ≈ 1.0, as expected for ideal behavior of a semiconductor/liquid junction. The barrier heights calculated for the chemically modified InP/liquid junctions were 100 ± 20 mV higher than the barrier heights of freshly etched, unmodified (111)B InP surfaces in contact with the same electrolyte solutions. The higher barrier heights of the chemically modified surfaces are consistent with a shift in the InP band-edge energies induced by the surface modification process. The modified and etched surfaces both displayed interfacial electron-transfer kinetics that were first order in the concentration of acceptors in solution and first order in the concentration of electrons at the semiconductor surface. The interfacial electron-transfer rate constants for these systems were determined to be ∼10-17-10-18 cm4 s-1.

UR - http://www.scopus.com/inward/record.url?scp=2342427944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342427944&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:2342427944

VL - 108

SP - 4449

EP - 4456

JO - Journal of Physical Chemistry B Materials

JF - Journal of Physical Chemistry B Materials

SN - 1520-6106

IS - 14

ER -