Energy-dependent vibrational spectra of the Si(111)-B surface

J. E. Rowe; R. A. Malic; E. E. Chaban; R. L. Headrick; Leonard C Feldman

doi:10.1016/0368-2048(90)80301-P

Energy-dependent vibrational spectra of the Si(111)-B surface

J. E. Rowe, R. A. Malic, E. E. Chaban, R. L. Headrick, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3^{1 2}×3^{1 2} periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, E_o≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.

Original language	English
Pages (from-to)	1115-1122
Number of pages	8
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	54-55
Issue number	C
DOIs	https://doi.org/10.1016/0368-2048(90)80301-P
Publication status	Published - 1990

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ASJC Scopus subject areas

Physical and Theoretical Chemistry
Spectroscopy
Atomic and Molecular Physics, and Optics
Surfaces and Interfaces

Cite this

Rowe, J. E., Malic, R. A., Chaban, E. E., Headrick, R. L., & Feldman, L. C. (1990). Energy-dependent vibrational spectra of the Si(111)-B surface. Journal of Electron Spectroscopy and Related Phenomena, 54-55(C), 1115-1122. https://doi.org/10.1016/0368-2048(90)80301-P

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abstract = "High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.",

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AU - Rowe, J. E.

AU - Malic, R. A.

AU - Chaban, E. E.

AU - Headrick, R. L.

AU - Feldman, Leonard C

PY - 1990

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N2 - High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.

AB - High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.

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10.1016/0368-2048(90)80301-P