Energy-dependent vibrational spectra of the Si(111)-B surface

J. E. Rowe, R. A. Malic, E. E. Chaban, R. L. Headrick, Leonard C Feldman

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.

Original languageEnglish
Pages (from-to)1115-1122
Number of pages8
JournalJournal of Electron Spectroscopy and Related Phenomena
Issue numberC
Publication statusPublished - 1990

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

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