Abstract
High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.
| Original language | English |
|---|---|
| Pages (from-to) | 1115-1122 |
| Number of pages | 8 |
| Journal | Journal of Electron Spectroscopy and Related Phenomena |
| Volume | 54-55 |
| Issue number | C |
| DOIs | |
| Publication status | Published - 1990 |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Spectroscopy
- Atomic and Molecular Physics, and Optics
- Surfaces and Interfaces
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Cite this
Rowe, J. E., Malic, R. A., Chaban, E. E., Headrick, R. L., & Feldman, L. C. (1990). Energy-dependent vibrational spectra of the Si(111)-B surface. Journal of Electron Spectroscopy and Related Phenomena, 54-55(C), 1115-1122. https://doi.org/10.1016/0368-2048(90)80301-P