High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.
|Number of pages||8|
|Journal||Journal of Electron Spectroscopy and Related Phenomena|
|Publication status||Published - 1990|
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Atomic and Molecular Physics, and Optics
- Surfaces and Interfaces