Energy-dependent vibrational spectra of the Si(111)-B surface

J. E. Rowe; R. A. Malic; E. E. Chaban; R. L. Headrick; Leonard C Feldman

doi:10.1016/0368-2048(90)80301-P

Energy-dependent vibrational spectra of the Si(111)-B surface

J. E. Rowe, R. A. Malic, E. E. Chaban, R. L. Headrick, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3^{1 2}×3^{1 2} periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, E_o≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.

Original language	English
Pages (from-to)	1115-1122
Number of pages	8
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	54-55
Issue number	C
DOIs	https://doi.org/10.1016/0368-2048(90)80301-P
Publication status	Published - 1990

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Spectroscopy
Atomic and Molecular Physics, and Optics
Surfaces and Interfaces

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title = "Energy-dependent vibrational spectra of the Si(111)-B surface",

abstract = "High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.",

author = "Rowe, {J. E.} and Malic, {R. A.} and Chaban, {E. E.} and Headrick, {R. L.} and Feldman, {Leonard C}",

year = "1990",

doi = "10.1016/0368-2048(90)80301-P",

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T1 - Energy-dependent vibrational spectra of the Si(111)-B surface

AU - Rowe, J. E.

AU - Malic, R. A.

AU - Chaban, E. E.

AU - Headrick, R. L.

AU - Feldman, Leonard C

PY - 1990

Y1 - 1990

N2 - High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.

AB - High resolution electron energy loss spectroscsopy measurements have been performed on heavily boron doped Si(1111) surfaces. These samples have a 3 1 2×3 1 2 periodicity with boron in the second complete layer. Three vibration losses are observed at 59, 107, and 168 meV and are due to dipole allowed modes of Si-Si, B-Si and a combination mode. The combination mode is quite strong and indicates a large anharmonic coupling between the B-Si and Si-Si modes. At higher incident electron energies, Eo≥15 eV, a broad surface plasmon mode is observed at ~180 meV loss energy due to the free carriers in the region below the B-reconstructed surface layer.

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Energy-dependent vibrational spectra of the Si(111)-B surface

Abstract

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