Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation

R. Lopez, L. A. Boatner, T. E. Haynes, R. F. Haglund, Leonard C Feldman

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Abstract

A strongly enhanced hysteresis with a width of >34°C has been observed in the semiconductor-to-metal phase transition of submicron-scale VO2 precipitates formed in the near-surface region of amorphous SiO2 by the stoichiometric coimplantation of vanadium and oxygen and subsequent thermal processing. This width is approximately an order of magnitude larger than that reported previously for the phase transition of VO2 particles formed in Al2O3 by a similar technique. The phase transition is accompanied by a significant change in infrared transmission. The anomalously wide hysteresis loop observed here for the VO2/SiO2 system can be exploited in optical data storage and switching applications in the infrared region.

Original languageEnglish
Pages (from-to)3161-3163
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number19
DOIs
Publication statusPublished - Nov 5 2001

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ion implantation
precipitates
hysteresis
metals
data storage
vanadium
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation. / Lopez, R.; Boatner, L. A.; Haynes, T. E.; Haglund, R. F.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 79, No. 19, 05.11.2001, p. 3161-3163.

Research output: Contribution to journalArticle

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