Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation

Gang Liu; Ayayi C. Ahyi; Yi Xu; Tamara Isaacs-Smith; Yogesh K. Sharma; John R. Williams; Leonard C. Feldman; Sarit Dhar

doi:10.1109/LED.2012.2233458

Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation

Gang Liu, Ayayi C. Ahyi, Yi Xu, Tamara Isaacs-Smith, Yogesh K. Sharma, John R. Williams, Leonard C. Feldman, Sarit Dhar

Rutgers University

Research output: Contribution to journal › Article

80 Citations (Scopus)

Abstract

Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (112̄0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO₂/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ∼125 cm² V s. We also revisit the conventional NO passivation, for which a mobility of ∼85 cm² V s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.

Original language	English
Article number	6407729
Pages (from-to)	181-183
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2233458
Publication status	Published - Feb 1 2013

Keywords

4H-SiC MOSFET
counter-doping
mobility

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Liu, G., Ahyi, A. C., Xu, Y., Isaacs-Smith, T., Sharma, Y. K., Williams, J. R., Feldman, L. C., & Dhar, S. (2013). Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation. IEEE Electron Device Letters, 34(2), 181-183. [6407729]. https://doi.org/10.1109/LED.2012.2233458

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abstract = "Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (11{\=2}0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ∼125 cm2 V s. We also revisit the conventional NO passivation, for which a mobility of ∼85 cm2 V s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.",

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AU - Liu, Gang

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AU - Isaacs-Smith, Tamara

AU - Sharma, Yogesh K.

AU - Williams, John R.

AU - Feldman, Leonard C.

AU - Dhar, Sarit

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AB - Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (112̄0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ∼125 cm2 V s. We also revisit the conventional NO passivation, for which a mobility of ∼85 cm2 V s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.

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