Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation

Gang Liu, Ayayi C. Ahyi, Yi Xu, Tamara Isaacs-Smith, Yogesh K. Sharma, John R. Williams, Leonard C. Feldman, Sarit Dhar

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80 Citations (Scopus)

Abstract

Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (112̄0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ∼125 cm2 V s. We also revisit the conventional NO passivation, for which a mobility of ∼85 cm2 V s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.

Original languageEnglish
Article number6407729
Pages (from-to)181-183
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - Feb 1 2013

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Keywords

  • 4H-SiC MOSFET
  • counter-doping
  • mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liu, G., Ahyi, A. C., Xu, Y., Isaacs-Smith, T., Sharma, Y. K., Williams, J. R., Feldman, L. C., & Dhar, S. (2013). Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation. IEEE Electron Device Letters, 34(2), 181-183. [6407729]. https://doi.org/10.1109/LED.2012.2233458