Abstract
Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (112̄0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ∼125 cm2 V s. We also revisit the conventional NO passivation, for which a mobility of ∼85 cm2 V s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.
| Original language | English |
|---|---|
| Article number | 6407729 |
| Pages (from-to) | 181-183 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 34 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2013 |
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Keywords
- 4H-SiC MOSFET
- counter-doping
- mobility
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation. / Liu, Gang; Ahyi, Ayayi C.; Xu, Yi; Isaacs-Smith, Tamara; Sharma, Yogesh K.; Williams, John R.; Feldman, Leonard C; Dhar, Sarit.
In: IEEE Electron Device Letters, Vol. 34, No. 2, 6407729, 2013, p. 181-183.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation
AU - Liu, Gang
AU - Ahyi, Ayayi C.
AU - Xu, Yi
AU - Isaacs-Smith, Tamara
AU - Sharma, Yogesh K.
AU - Williams, John R.
AU - Feldman, Leonard C
AU - Dhar, Sarit
PY - 2013
Y1 - 2013
N2 - Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (112̄0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ∼125 cm2 V s. We also revisit the conventional NO passivation, for which a mobility of ∼85 cm2 V s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.
AB - Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (112̄0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ∼125 cm2 V s. We also revisit the conventional NO passivation, for which a mobility of ∼85 cm2 V s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.
KW - 4H-SiC MOSFET
KW - counter-doping
KW - mobility
UR - http://www.scopus.com/inward/record.url?scp=84873043736&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873043736&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2233458
DO - 10.1109/LED.2012.2233458
M3 - Article
AN - SCOPUS:84873043736
VL - 34
SP - 181
EP - 183
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 2
M1 - 6407729
ER -