Enhanced rate of radiative decay in cdse quantum dots upon adsorption of an exciton-delocalizing ligand

Shengye Jin, Rachel D. Harris, Bryan Lau, Kenneth O. Aruda, Victor A. Amin, Emily A Weiss

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

This paper describes the enhancement of the quantum yield of photoluminescence (PL) of CdSe quantum dots (QDs) upon the adsorption of an exciton-delocalizing ligand, phenyldithiocarbamate. Increasing the apparent excitonic radius by only 10% increases the value of the radiative rate constant by a factor of 1.8 and the PL quantum yield by a factor of 2.4. Ligand exchange therefore simultaneously perturbs the confinement energy of charge carriers and enhances the probability of band-edge transitions.

Original languageEnglish
Pages (from-to)5323-5328
Number of pages6
JournalNano Letters
Volume14
Issue number9
DOIs
Publication statusPublished - Sep 10 2014

Fingerprint

Quantum yield
Excitons
Semiconductor quantum dots
Photoluminescence
Ligands
quantum dots
excitons
photoluminescence
Plasma confinement
Adsorption
ligands
adsorption
decay
Charge carriers
charge carriers
Rate constants
radii
augmentation
LDS 751
energy

Keywords

  • CdSe quantum dot
  • dithiocarbamate
  • exciton delocalization
  • oscillator strength
  • radiative decay

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Enhanced rate of radiative decay in cdse quantum dots upon adsorption of an exciton-delocalizing ligand. / Jin, Shengye; Harris, Rachel D.; Lau, Bryan; Aruda, Kenneth O.; Amin, Victor A.; Weiss, Emily A.

In: Nano Letters, Vol. 14, No. 9, 10.09.2014, p. 5323-5328.

Research output: Contribution to journalArticle

Jin, Shengye ; Harris, Rachel D. ; Lau, Bryan ; Aruda, Kenneth O. ; Amin, Victor A. ; Weiss, Emily A. / Enhanced rate of radiative decay in cdse quantum dots upon adsorption of an exciton-delocalizing ligand. In: Nano Letters. 2014 ; Vol. 14, No. 9. pp. 5323-5328.
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