Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe

Li Dong Zhao, Xiao Zhang, Haijun Wu, Gangjian Tan, Yanling Pei, Yu Xiao, Cheng Chang, Di Wu, Hang Chi, Lei Zheng, Shengkai Gong, Ctirad Uher, Jiaqing He, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 μW cm-1 K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from ∼2.0 Wm-1 K-1 for Sn0.97Bi0.03Te to ∼1.2 Wm-1 K-1 as the SrTe content is increased from 0 to 5.0% at room temperature and from ∼1.1 to ∼0.70 Wm-1 K-1 at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.

Original languageEnglish
Pages (from-to)2366-2373
Number of pages8
JournalJournal of the American Chemical Society
Volume138
Issue number7
DOIs
Publication statusPublished - Mar 2 2016

Fingerprint

Thermal Conductivity
Thermal conductivity
Temperature
Phonons
Phonon scattering
Seebeck coefficient
Nanostructures
Carrier mobility
Fermi level
Transport properties
Carrier concentration
Tuning
Doping (additives)

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe. / Zhao, Li Dong; Zhang, Xiao; Wu, Haijun; Tan, Gangjian; Pei, Yanling; Xiao, Yu; Chang, Cheng; Wu, Di; Chi, Hang; Zheng, Lei; Gong, Shengkai; Uher, Ctirad; He, Jiaqing; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 138, No. 7, 02.03.2016, p. 2366-2373.

Research output: Contribution to journalArticle

Zhao, LD, Zhang, X, Wu, H, Tan, G, Pei, Y, Xiao, Y, Chang, C, Wu, D, Chi, H, Zheng, L, Gong, S, Uher, C, He, J & Kanatzidis, MG 2016, 'Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe', Journal of the American Chemical Society, vol. 138, no. 7, pp. 2366-2373. https://doi.org/10.1021/jacs.5b13276
Zhao, Li Dong ; Zhang, Xiao ; Wu, Haijun ; Tan, Gangjian ; Pei, Yanling ; Xiao, Yu ; Chang, Cheng ; Wu, Di ; Chi, Hang ; Zheng, Lei ; Gong, Shengkai ; Uher, Ctirad ; He, Jiaqing ; Kanatzidis, Mercouri G. / Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe. In: Journal of the American Chemical Society. 2016 ; Vol. 138, No. 7. pp. 2366-2373.
@article{edd389bd708e42b5be0e7a656c7c1f1c,
title = "Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe",
abstract = "We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 μW cm-1 K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from ∼2.0 Wm-1 K-1 for Sn0.97Bi0.03Te to ∼1.2 Wm-1 K-1 as the SrTe content is increased from 0 to 5.0{\%} at room temperature and from ∼1.1 to ∼0.70 Wm-1 K-1 at 823 K. For the Sn0.97Bi0.03Te-3{\%} SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.",
author = "Zhao, {Li Dong} and Xiao Zhang and Haijun Wu and Gangjian Tan and Yanling Pei and Yu Xiao and Cheng Chang and Di Wu and Hang Chi and Lei Zheng and Shengkai Gong and Ctirad Uher and Jiaqing He and Kanatzidis, {Mercouri G}",
year = "2016",
month = "3",
day = "2",
doi = "10.1021/jacs.5b13276",
language = "English",
volume = "138",
pages = "2366--2373",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe

AU - Zhao, Li Dong

AU - Zhang, Xiao

AU - Wu, Haijun

AU - Tan, Gangjian

AU - Pei, Yanling

AU - Xiao, Yu

AU - Chang, Cheng

AU - Wu, Di

AU - Chi, Hang

AU - Zheng, Lei

AU - Gong, Shengkai

AU - Uher, Ctirad

AU - He, Jiaqing

AU - Kanatzidis, Mercouri G

PY - 2016/3/2

Y1 - 2016/3/2

N2 - We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 μW cm-1 K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from ∼2.0 Wm-1 K-1 for Sn0.97Bi0.03Te to ∼1.2 Wm-1 K-1 as the SrTe content is increased from 0 to 5.0% at room temperature and from ∼1.1 to ∼0.70 Wm-1 K-1 at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.

AB - We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 μW cm-1 K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from ∼2.0 Wm-1 K-1 for Sn0.97Bi0.03Te to ∼1.2 Wm-1 K-1 as the SrTe content is increased from 0 to 5.0% at room temperature and from ∼1.1 to ∼0.70 Wm-1 K-1 at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.

UR - http://www.scopus.com/inward/record.url?scp=84959378687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959378687&partnerID=8YFLogxK

U2 - 10.1021/jacs.5b13276

DO - 10.1021/jacs.5b13276

M3 - Article

AN - SCOPUS:84959378687

VL - 138

SP - 2366

EP - 2373

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 7

ER -