Abstract
Bottom-contact/bottom-gate organic thin-film transistors (OTFTs) are fabricated using a soluble pentacene precursor (13,6-N- sulfinylacetamidopentacene; SAP) and inkjet printed PEDOT:PSS electrodes on bare SiO2 dielectrics. Saturation mobility, Ion/I off ratio, and threshold voltage parameters, respectively, of 0.27 cm2 V-1 s-1, 105, and -4.25 V were measured under ambient conditions after the thermal conversion of SAP to pentacene in 100 ?m long channel OTFT devices. The results obtained by the above solution approach are comparable to that of vapor-phase grown pentacene-based OTFTs with photolithographic gold contacts and organic buffer layers and/or inorganic injection layers. The present high performance level is ascribed to the morphological continuity and uniformity of the first few layers of the polycrystalline semiconductor phase at the interface with the organic electrodes, which in effect constitute an ideal chemical interface for the converted SAP. In contrast, gold electrodes thermally evaporated by employing shadow masks result in blurred-edge regions, drastically affecting the semiconductor morphology along with the transport properties.
| Original language | English |
|---|---|
| Pages (from-to) | 1061-1069 |
| Number of pages | 9 |
| Journal | Chemistry of Materials |
| Volume | 23 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Feb 22 2011 |
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ASJC Scopus subject areas
- Materials Chemistry
- Chemical Engineering(all)
- Chemistry(all)
Cite this
Enhanced thin-film transistor performance by combining 13,6-N- sulfinylacetamidopentacene with printed PEDOT : PSS electrodes. / Luzio, Alessandro; Musumeci, Chiara; Newman, Christopher R.; Facchetti, Antonio; Marks, Tobin J; Pignataro, Bruno.
In: Chemistry of Materials, Vol. 23, No. 4, 22.02.2011, p. 1061-1069.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhanced thin-film transistor performance by combining 13,6-N- sulfinylacetamidopentacene with printed PEDOT
T2 - PSS electrodes
AU - Luzio, Alessandro
AU - Musumeci, Chiara
AU - Newman, Christopher R.
AU - Facchetti, Antonio
AU - Marks, Tobin J
AU - Pignataro, Bruno
PY - 2011/2/22
Y1 - 2011/2/22
N2 - Bottom-contact/bottom-gate organic thin-film transistors (OTFTs) are fabricated using a soluble pentacene precursor (13,6-N- sulfinylacetamidopentacene; SAP) and inkjet printed PEDOT:PSS electrodes on bare SiO2 dielectrics. Saturation mobility, Ion/I off ratio, and threshold voltage parameters, respectively, of 0.27 cm2 V-1 s-1, 105, and -4.25 V were measured under ambient conditions after the thermal conversion of SAP to pentacene in 100 ?m long channel OTFT devices. The results obtained by the above solution approach are comparable to that of vapor-phase grown pentacene-based OTFTs with photolithographic gold contacts and organic buffer layers and/or inorganic injection layers. The present high performance level is ascribed to the morphological continuity and uniformity of the first few layers of the polycrystalline semiconductor phase at the interface with the organic electrodes, which in effect constitute an ideal chemical interface for the converted SAP. In contrast, gold electrodes thermally evaporated by employing shadow masks result in blurred-edge regions, drastically affecting the semiconductor morphology along with the transport properties.
AB - Bottom-contact/bottom-gate organic thin-film transistors (OTFTs) are fabricated using a soluble pentacene precursor (13,6-N- sulfinylacetamidopentacene; SAP) and inkjet printed PEDOT:PSS electrodes on bare SiO2 dielectrics. Saturation mobility, Ion/I off ratio, and threshold voltage parameters, respectively, of 0.27 cm2 V-1 s-1, 105, and -4.25 V were measured under ambient conditions after the thermal conversion of SAP to pentacene in 100 ?m long channel OTFT devices. The results obtained by the above solution approach are comparable to that of vapor-phase grown pentacene-based OTFTs with photolithographic gold contacts and organic buffer layers and/or inorganic injection layers. The present high performance level is ascribed to the morphological continuity and uniformity of the first few layers of the polycrystalline semiconductor phase at the interface with the organic electrodes, which in effect constitute an ideal chemical interface for the converted SAP. In contrast, gold electrodes thermally evaporated by employing shadow masks result in blurred-edge regions, drastically affecting the semiconductor morphology along with the transport properties.
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U2 - 10.1021/cm103326n
DO - 10.1021/cm103326n
M3 - Article
VL - 23
SP - 1061
EP - 1069
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 4
ER -