Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

Bongjun Kim, Kelly Liang, Michael L. Geier, Mark C Hersam, Ananth Dodabalapur

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

Original languageEnglish
Article number023515
JournalApplied Physics Letters
Volume109
Issue number2
DOIs
Publication statusPublished - Jul 11 2016

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carrier injection
minority carriers
transistors
carbon nanotubes
augmentation
injection
electric potential
thin films
electronics
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures. / Kim, Bongjun; Liang, Kelly; Geier, Michael L.; Hersam, Mark C; Dodabalapur, Ananth.

In: Applied Physics Letters, Vol. 109, No. 2, 023515, 11.07.2016.

Research output: Contribution to journalArticle

Kim, Bongjun ; Liang, Kelly ; Geier, Michael L. ; Hersam, Mark C ; Dodabalapur, Ananth. / Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures. In: Applied Physics Letters. 2016 ; Vol. 109, No. 2.
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