Enhancing surface plasmon leakage at the metal/semiconductor interface: Towards increased light outcoupling efficiency in organic optoelectronics

Jesse Kohl, Joseph A. Pantina, Deirdre M O'Carroll

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The light outcoupling efficiency of organic light-emitting optoelectronic devices is severely limited by excitation of tightly bound surface plasmon polaritons at the metal electrodes. We present a theoretical study of an organic semiconductor-silver-SiO2 waveguide and demonstrate that by simple tuning of metal film thickness and the emission regime of the organic semiconductor, a significant fraction of surface plasmon polariton mode amplitude is leaked into the active semiconductor layer, thereby decreasing the amount of optical energy trapped by the metal. At visible wavelengths, mode leakage increases by factors of up to 3.8 and 88 by tuning metal film thickness and by addition of gain, respectively.

Original languageEnglish
Pages (from-to)7644-7656
Number of pages13
JournalOptics Express
Volume22
Issue number7
DOIs
Publication statusPublished - 2014

Fingerprint

organic semiconductors
metal films
polaritons
leakage
film thickness
tuning
optoelectronic devices
metals
silver
waveguides
electrodes
wavelengths
excitation
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Enhancing surface plasmon leakage at the metal/semiconductor interface : Towards increased light outcoupling efficiency in organic optoelectronics. / Kohl, Jesse; Pantina, Joseph A.; O'Carroll, Deirdre M.

In: Optics Express, Vol. 22, No. 7, 2014, p. 7644-7656.

Research output: Contribution to journalArticle

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