Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide

Jonathan D. Emery, Christian M. Schlepütz, Peijun Guo, Robert P. H. Chang, Alex B F Martinson

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Coherently strained, epitaxial Sn-doped In2O3 (ITO) thin films were fabricated at temperatures as low as 250 °C using atomic layer deposition (ALD) on (001)-, (011)-, and (111)-oriented single-crystal Y-stabilized ZrO2 (YSZ) substrates. Resultant films possess cube-on-cube epitaxial relationships with the underlying YSZ substrates and are smooth, highly conductive, and optically transparent. This epitaxial ALD approach is favorable compared to many conventional growth techniques as it is a large-scale synthesis method that does not necessitate the use of high temperatures or ultrahigh vacuum. These films may prove valuable as a conductive growth template in areas where high-quality crystalline thin film substrates are important, such as solar energy materials, light-emitting diodes, or wide bandgap semiconductors. Furthermore, we discuss the applicability of this ALD system as an excellent model system for the study of ALD surface chemistry, nucleation, and film growth.

Original languageEnglish
Pages (from-to)640-645
Number of pages6
JournalCrystal Growth and Design
Volume16
Issue number2
DOIs
Publication statusPublished - Feb 3 2016

Fingerprint

Atomic layer deposition
atomic layer epitaxy
indium oxides
Indium
Oxides
Substrates
Thin films
solar energy
Ultrahigh vacuum
Film growth
thin films
Surface chemistry
ITO (semiconductors)
Solar energy
ultrahigh vacuum
Light emitting diodes
Energy gap
Nucleation
light emitting diodes
templates

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide. / Emery, Jonathan D.; Schlepütz, Christian M.; Guo, Peijun; Chang, Robert P. H.; Martinson, Alex B F.

In: Crystal Growth and Design, Vol. 16, No. 2, 03.02.2016, p. 640-645.

Research output: Contribution to journalArticle

Emery, JD, Schlepütz, CM, Guo, P, Chang, RPH & Martinson, ABF 2016, 'Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide', Crystal Growth and Design, vol. 16, no. 2, pp. 640-645. https://doi.org/10.1021/acs.cgd.5b01086
Emery, Jonathan D. ; Schlepütz, Christian M. ; Guo, Peijun ; Chang, Robert P. H. ; Martinson, Alex B F. / Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide. In: Crystal Growth and Design. 2016 ; Vol. 16, No. 2. pp. 640-645.
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