Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Gavin P. Campbell, Brian Kiraly, Robert M. Jacobberger, Andrew J. Mannix, Michael S. Arnold, Mark C Hersam, Nathan P. Guisinger, Michael J. Bedzyk

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Abstract

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Original languageEnglish
Article number044004
JournalPhysical Review Materials
Volume2
Issue number4
DOIs
Publication statusPublished - Apr 13 2018

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ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Campbell, G. P., Kiraly, B., Jacobberger, R. M., Mannix, A. J., Arnold, M. S., Hersam, M. C., ... Bedzyk, M. J. (2018). Epitaxial graphene-encapsulated surface reconstruction of Ge(110). Physical Review Materials, 2(4), [044004]. https://doi.org/10.1103/PhysRevMaterials.2.044004