Abstract
Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.
| Original language | English |
|---|---|
| Article number | 044004 |
| Journal | Physical Review Materials |
| Volume | 2 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 13 2018 |
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ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
Cite this
Epitaxial graphene-encapsulated surface reconstruction of Ge(110). / Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C; Guisinger, Nathan P.; Bedzyk, Michael J.
In: Physical Review Materials, Vol. 2, No. 4, 044004, 13.04.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Epitaxial graphene-encapsulated surface reconstruction of Ge(110)
AU - Campbell, Gavin P.
AU - Kiraly, Brian
AU - Jacobberger, Robert M.
AU - Mannix, Andrew J.
AU - Arnold, Michael S.
AU - Hersam, Mark C
AU - Guisinger, Nathan P.
AU - Bedzyk, Michael J.
PY - 2018/4/13
Y1 - 2018/4/13
N2 - Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.
AB - Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.
UR - http://www.scopus.com/inward/record.url?scp=85053877847&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85053877847&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.2.044004
DO - 10.1103/PhysRevMaterials.2.044004
M3 - Article
AN - SCOPUS:85053877847
VL - 2
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 4
M1 - 044004
ER -