Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Gavin P. Campbell; Brian Kiraly; Robert M. Jacobberger; Andrew J. Mannix; Michael S. Arnold; Mark C. Hersam; Nathan P. Guisinger; Michael J. Bedzyk

doi:10.1103/PhysRevMaterials.2.044004

Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Gavin P. Campbell, Brian Kiraly, Robert M. Jacobberger, Andrew J. Mannix, Michael S. Arnold, Mark C. Hersam, Nathan P. Guisinger, Michael J. Bedzyk

Northwestern University

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Original language	English
Article number	044004
Journal	Physical Review Materials
Volume	2
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevMaterials.2.044004
Publication status	Published - Apr 13 2018

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy (miscellaneous)

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abstract = "Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) {"}6 × 2{"} reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.",

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AU - Arnold, Michael S.

AU - Hersam, Mark C.

AU - Guisinger, Nathan P.

AU - Bedzyk, Michael J.

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AB - Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

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