Epitaxial growth of alkaline earth fluorides on semiconductors

Julia M. Phillips, Leonard C Feldman, J. M. Gibson, M. L. McDonald

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The growth and characterization of epitaxial alkaline earth fluorides (CaF2, SrF2, BaF2 and mixtures thereof) on semiconductors are reviewed. Various mixed and unmixed fluorides have been found to grow epitaxially on several semiconductors, most notably silicon, InP and germanium. Parameters which strongly affect the epitaxial quality include the substrate temperature during deposition and the substrate orientation. The degree of lattice matching plays a much smaller role in determining the epitaxial quality. In one fluoride/semiconductor system (BaF2/Ge(111)) there is a novel interface which exhibits neither misfit dislocations nor coherence, despite a large lattice mismatch. The fluorides show promise as epitaxial insulating layers in semiconductor/insulator/semiconductor heterostructures.

Original languageEnglish
Pages (from-to)217-226
Number of pages10
JournalThin Solid Films
Volume107
Issue number3
DOIs
Publication statusPublished - Sep 23 1983

Fingerprint

Fluorides
Epitaxial growth
fluorides
Earth (planet)
Semiconductor materials
SIS (semiconductors)
Germanium
Lattice mismatch
Silicon
Substrates
germanium
Dislocations (crystals)
Heterojunctions
silicon
temperature
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Epitaxial growth of alkaline earth fluorides on semiconductors. / Phillips, Julia M.; Feldman, Leonard C; Gibson, J. M.; McDonald, M. L.

In: Thin Solid Films, Vol. 107, No. 3, 23.09.1983, p. 217-226.

Research output: Contribution to journalArticle

Phillips, Julia M. ; Feldman, Leonard C ; Gibson, J. M. ; McDonald, M. L. / Epitaxial growth of alkaline earth fluorides on semiconductors. In: Thin Solid Films. 1983 ; Vol. 107, No. 3. pp. 217-226.
@article{0f4b86e62fd1455692e2807bfc125cec,
title = "Epitaxial growth of alkaline earth fluorides on semiconductors",
abstract = "The growth and characterization of epitaxial alkaline earth fluorides (CaF2, SrF2, BaF2 and mixtures thereof) on semiconductors are reviewed. Various mixed and unmixed fluorides have been found to grow epitaxially on several semiconductors, most notably silicon, InP and germanium. Parameters which strongly affect the epitaxial quality include the substrate temperature during deposition and the substrate orientation. The degree of lattice matching plays a much smaller role in determining the epitaxial quality. In one fluoride/semiconductor system (BaF2/Ge(111)) there is a novel interface which exhibits neither misfit dislocations nor coherence, despite a large lattice mismatch. The fluorides show promise as epitaxial insulating layers in semiconductor/insulator/semiconductor heterostructures.",
author = "Phillips, {Julia M.} and Feldman, {Leonard C} and Gibson, {J. M.} and McDonald, {M. L.}",
year = "1983",
month = "9",
day = "23",
doi = "10.1016/0040-6090(83)90400-5",
language = "English",
volume = "107",
pages = "217--226",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Epitaxial growth of alkaline earth fluorides on semiconductors

AU - Phillips, Julia M.

AU - Feldman, Leonard C

AU - Gibson, J. M.

AU - McDonald, M. L.

PY - 1983/9/23

Y1 - 1983/9/23

N2 - The growth and characterization of epitaxial alkaline earth fluorides (CaF2, SrF2, BaF2 and mixtures thereof) on semiconductors are reviewed. Various mixed and unmixed fluorides have been found to grow epitaxially on several semiconductors, most notably silicon, InP and germanium. Parameters which strongly affect the epitaxial quality include the substrate temperature during deposition and the substrate orientation. The degree of lattice matching plays a much smaller role in determining the epitaxial quality. In one fluoride/semiconductor system (BaF2/Ge(111)) there is a novel interface which exhibits neither misfit dislocations nor coherence, despite a large lattice mismatch. The fluorides show promise as epitaxial insulating layers in semiconductor/insulator/semiconductor heterostructures.

AB - The growth and characterization of epitaxial alkaline earth fluorides (CaF2, SrF2, BaF2 and mixtures thereof) on semiconductors are reviewed. Various mixed and unmixed fluorides have been found to grow epitaxially on several semiconductors, most notably silicon, InP and germanium. Parameters which strongly affect the epitaxial quality include the substrate temperature during deposition and the substrate orientation. The degree of lattice matching plays a much smaller role in determining the epitaxial quality. In one fluoride/semiconductor system (BaF2/Ge(111)) there is a novel interface which exhibits neither misfit dislocations nor coherence, despite a large lattice mismatch. The fluorides show promise as epitaxial insulating layers in semiconductor/insulator/semiconductor heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=0020815529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020815529&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(83)90400-5

DO - 10.1016/0040-6090(83)90400-5

M3 - Article

AN - SCOPUS:0020815529

VL - 107

SP - 217

EP - 226

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 3

ER -