Epitaxial growth of BaF2 on semiconductor substrates

J. M. Phillips, Leonard C Feldman, J. M. Gibson, M. L. McDonald

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2Ge(111) interface in spite of the 9.1% lattice mismatch.

Original languageEnglish
Pages (from-to)101-107
Number of pages7
JournalThin Solid Films
Volume104
Issue number1-2
DOIs
Publication statusPublished - Jun 17 1983

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Epitaxial growth
epitaxy
Semiconductor materials
transmission electron microscopy
Substrates
Transmission electron microscopy
backscattering
Lattice mismatch
Rutherford backscattering spectroscopy
Dislocations (crystals)
vacuum
Vacuum
temperature
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Epitaxial growth of BaF2 on semiconductor substrates. / Phillips, J. M.; Feldman, Leonard C; Gibson, J. M.; McDonald, M. L.

In: Thin Solid Films, Vol. 104, No. 1-2, 17.06.1983, p. 101-107.

Research output: Contribution to journalArticle

Phillips, JM, Feldman, LC, Gibson, JM & McDonald, ML 1983, 'Epitaxial growth of BaF2 on semiconductor substrates', Thin Solid Films, vol. 104, no. 1-2, pp. 101-107. https://doi.org/10.1016/0040-6090(83)90552-7
Phillips, J. M. ; Feldman, Leonard C ; Gibson, J. M. ; McDonald, M. L. / Epitaxial growth of BaF2 on semiconductor substrates. In: Thin Solid Films. 1983 ; Vol. 104, No. 1-2. pp. 101-107.
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