Epitaxial growth of BaF2 on semiconductor substrates

J. M. Phillips; L. C. Feldman; J. M. Gibson; M. L. McDonald

doi:10.1016/0040-6090(83)90552-7

Epitaxial growth of BaF₂ on semiconductor substrates

J. M. Phillips, L. C. Feldman, J. M. Gibson, M. L. McDonald

Rutgers University

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF₂ vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF₂ on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF₂ on InP(111) through fair for BaF₂ on InP(100) to excellent for BaF₂ on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF₂ on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF₂Ge(111) interface in spite of the 9.1% lattice mismatch.

Original language	English
Pages (from-to)	101-107
Number of pages	7
Journal	Thin Solid Films
Volume	104
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(83)90552-7
Publication status	Published - Jun 17 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Epitaxial growth of BaF2 on semiconductor substrates",

abstract = "We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2Ge(111) interface in spite of the 9.1% lattice mismatch.",

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AU - Phillips, J. M.

AU - Feldman, L. C.

AU - Gibson, J. M.

AU - McDonald, M. L.

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N2 - We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2Ge(111) interface in spite of the 9.1% lattice mismatch.

AB - We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2Ge(111) interface in spite of the 9.1% lattice mismatch.

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