Epitaxial growth of BaF2 on semiconductor substrates

J. M. Phillips, L. C. Feldman, J. M. Gibson, M. L. McDonald

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2Ge(111) interface in spite of the 9.1% lattice mismatch.

Original languageEnglish
Pages (from-to)101-107
Number of pages7
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Jun 17 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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