Abstract
We used Rutherford backscattering and channeling and transmission electron microscopy (TEM) to study the epitaxial growth of BaF2 vacuum deposited onto InP(100), InP(111), Ge(100) and Ge(111). We observed no epitaxy in BaF2 on Ge(100). The other three cases all show epitaxy, with quality ranging from poor for BaF2 on InP(111) through fair for BaF2 on InP(100) to excellent for BaF2 on Ge(111). Epitaxial quality depends strongly on substrate temperature for BaF2 on Ge(111). TEM analysis indicates that there are neither misfit dislocations nor coherence at the BaF2Ge(111) interface in spite of the 9.1% lattice mismatch.
| Original language | English |
|---|---|
| Pages (from-to) | 101-107 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 104 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Jun 17 1983 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Phillips, J. M., Feldman, L. C., Gibson, J. M., & McDonald, M. L. (1983). Epitaxial growth of BaF2 on semiconductor substrates. Thin Solid Films, 104(1-2), 101-107. https://doi.org/10.1016/0040-6090(83)90552-7