Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition

L. A. Wills, B. W. Wessels, D. S. Richeson, Tobin J Marks

Research output: Contribution to journalArticle

132 Citations (Scopus)

Abstract

Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800°C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.

Original languageEnglish
Pages (from-to)41-43
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number1
DOIs
Publication statusPublished - 1992

Fingerprint

vapor deposition
thin films
epitaxy
partial pressure
x ray diffraction
low pressure
titanium
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition. / Wills, L. A.; Wessels, B. W.; Richeson, D. S.; Marks, Tobin J.

In: Applied Physics Letters, Vol. 60, No. 1, 1992, p. 41-43.

Research output: Contribution to journalArticle

Wills, L. A. ; Wessels, B. W. ; Richeson, D. S. ; Marks, Tobin J. / Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition. In: Applied Physics Letters. 1992 ; Vol. 60, No. 1. pp. 41-43.
@article{270ad9c8571b4ca7928e20d0562eb803,
title = "Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition",
abstract = "Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800°C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.",
author = "Wills, {L. A.} and Wessels, {B. W.} and Richeson, {D. S.} and Marks, {Tobin J}",
year = "1992",
doi = "10.1063/1.107359",
language = "English",
volume = "60",
pages = "41--43",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition

AU - Wills, L. A.

AU - Wessels, B. W.

AU - Richeson, D. S.

AU - Marks, Tobin J

PY - 1992

Y1 - 1992

N2 - Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800°C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.

AB - Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800°C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.

UR - http://www.scopus.com/inward/record.url?scp=0001210727&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001210727&partnerID=8YFLogxK

U2 - 10.1063/1.107359

DO - 10.1063/1.107359

M3 - Article

AN - SCOPUS:0001210727

VL - 60

SP - 41

EP - 43

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -