Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition

L. A. Wills, B. W. Wessels, D. S. Richeson, Tobin J Marks

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135 Citations (Scopus)


Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800°C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.

Original languageEnglish
Pages (from-to)41-43
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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