Phase-pure epitaxial (81-xCax)CuO2 thin films having the infinite-layer crystal structure were grown on SrTiO3 (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O2, H2O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0-0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction Φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 $C and 750 °C, respectively.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Sep 23 1996|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)