Epitaxial growth of (Sr1-xCax)CuO2 thin film with the infinite-layer structure by metal-organic chemical vapor deposition

K. W. Chang, B. W. Wessels, D. Studebaker, Tobin J Marks

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Phase-pure epitaxial (81-xCax)CuO2 thin films having the infinite-layer crystal structure were grown on SrTiO3 (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O2, H2O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0-0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction Φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 $C and 750 °C, respectively.

Original languageEnglish
Pages (from-to)1951-1953
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number13
Publication statusPublished - Sep 23 1996

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metalorganic chemical vapor deposition
semiconducting films
thin films
epitaxy
partial pressure
x ray diffraction
low pressure
anomalies
electrical resistivity
crystal structure
gases
metals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial growth of (Sr1-xCax)CuO2 thin film with the infinite-layer structure by metal-organic chemical vapor deposition. / Chang, K. W.; Wessels, B. W.; Studebaker, D.; Marks, Tobin J.

In: Applied Physics Letters, Vol. 69, No. 13, 23.09.1996, p. 1951-1953.

Research output: Contribution to journalArticle

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