Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition

S. R. Gilbert, B. W. Wessels, D. B. Studebaker, Tobin J Marks

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810°C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10 -4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.

Original languageEnglish
Pages (from-to)2487
Number of pages1
JournalApplied Physics Letters
Volume66
Publication statusPublished - 1995

Fingerprint

metalorganic chemical vapor deposition
thin films
epitaxy
Auger spectroscopy
electron spectroscopy
fluorine
contamination
x ray diffraction
low pressure
titanium
room temperature
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition. / Gilbert, S. R.; Wessels, B. W.; Studebaker, D. B.; Marks, Tobin J.

In: Applied Physics Letters, Vol. 66, 1995, p. 2487.

Research output: Contribution to journalArticle

Gilbert, S. R. ; Wessels, B. W. ; Studebaker, D. B. ; Marks, Tobin J. / Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition. In: Applied Physics Letters. 1995 ; Vol. 66. pp. 2487.
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