Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition

S. R. Gilbert, B. W. Wessels, D. B. Studebaker, T. J. Marks

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Abstract

Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810°C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10 -4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume66
Publication statusPublished - Dec 1 1995

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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