Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition

M. J. Nystrom, B. W. Wessels, D. B. Studebaker, Tobin J Marks, W. P. Lin, G. K. Wong

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Epitaxial potassium niobate thin films were deposited in situ by low pressure metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 800°C using niobium pentaethoxide and potassium tert-butoxide as volatile metalorganic precursors. Growth on single crystal (100) lanthanum aluminate substrates produced [110]-oriented potassium niobate films. The films have a smooth, featureless morphology. Atomic force microscopy of the MOCVD-derived films surface indicates a root-mean-square roughness of less than 2 nm. Second-harmonic generation of 1.064 μm incident light is observed from the potassium niobate thin films, and the effective second order nonlinear susceptibility d of the as-deposited film is as high as 13 pm/V.

Original languageEnglish
Pages (from-to)365
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

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niobates
metalorganic chemical vapor deposition
potassium
thin films
lanthanum
niobium
harmonic generations
roughness
low pressure
atomic force microscopy
magnetic permeability
single crystals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition. / Nystrom, M. J.; Wessels, B. W.; Studebaker, D. B.; Marks, Tobin J; Lin, W. P.; Wong, G. K.

In: Applied Physics Letters, Vol. 67, 1995, p. 365.

Research output: Contribution to journalArticle

Nystrom, M. J. ; Wessels, B. W. ; Studebaker, D. B. ; Marks, Tobin J ; Lin, W. P. ; Wong, G. K. / Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition. In: Applied Physics Letters. 1995 ; Vol. 67. pp. 365.
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