Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition

M. J. Nystrom, B. W. Wessels, D. B. Studebaker, Tobin J Marks, W. P. Lin, G. K. Wong

Research output: Contribution to journalArticle

33 Citations (Scopus)


Epitaxial potassium niobate thin films were deposited in situ by low pressure metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 800°C using niobium pentaethoxide and potassium tert-butoxide as volatile metalorganic precursors. Growth on single crystal (100) lanthanum aluminate substrates produced [110]-oriented potassium niobate films. The films have a smooth, featureless morphology. Atomic force microscopy of the MOCVD-derived films surface indicates a root-mean-square roughness of less than 2 nm. Second-harmonic generation of 1.064 μm incident light is observed from the potassium niobate thin films, and the effective second order nonlinear susceptibility d of the as-deposited film is as high as 13 pm/V.

Original languageEnglish
Pages (from-to)365
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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