Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator

D. Feijóo; J. C. Bean; L. J. Peticolas; L. C. Feldman; W. C. Liang

doi:10.1007/BF02670649

Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator

D. Feijóo, J. C. Bean, L. J. Peticolas, L. C. Feldman, W. C. Liang

Rutgers University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The etch rate in ethylene diamine pyrocatechol of Si_1-xGe_1-x (0.2 ≤ x< - 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.

Original language	English
Pages (from-to)	493-496
Number of pages	4
Journal	Journal of Electronic Materials
Volume	23
Issue number	6
DOIs	https://doi.org/10.1007/BF02670649
Publication status	Published - Jun 1 1994

Keywords

Bonded and etchback silicon-on-insulator (BE-SOI)
SiGe
etch stop
ethylene diamine pyrocatechol
silicon-on-insulator
wafer bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator",

abstract = "The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x< - 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.",

keywords = "Bonded and etchback silicon-on-insulator (BE-SOI), SiGe, etch stop, ethylene diamine pyrocatechol, silicon-on-insulator, wafer bonding",

author = "D. Feij{\'o}o and Bean, {J. C.} and Peticolas, {L. J.} and Feldman, {L. C.} and Liang, {W. C.}",

year = "1994",

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T1 - Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator

AU - Feijóo, D.

AU - Bean, J. C.

AU - Peticolas, L. J.

AU - Feldman, L. C.

AU - Liang, W. C.

PY - 1994/6/1

Y1 - 1994/6/1

N2 - The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x< - 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.

AB - The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x< - 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.

KW - Bonded and etchback silicon-on-insulator (BE-SOI)

KW - SiGe

KW - etch stop

KW - ethylene diamine pyrocatechol

KW - silicon-on-insulator

KW - wafer bonding

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