Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator

D. Feijóo, J. C. Bean, L. J. Peticolas, Leonard C Feldman, W. C. Liang

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x<- 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.

Original languageEnglish
Pages (from-to)493-496
Number of pages4
JournalJournal of Electronic Materials
Volume23
Issue number6
DOIs
Publication statusPublished - Jun 1994

Fingerprint

Boron
Diamines
Rutherford backscattering spectroscopy
Silicon
ethylenediamine
Molecular beam epitaxy
Spectrometry
Etching
Ethylene
Defects
silicon
backscattering
boron
molecular beam epitaxy
selectivity
etching
Temperature
defects
spectroscopy
temperature

Keywords

  • Bonded and etchback silicon-on-insulator (BE-SOI)
  • etch stop
  • ethylene diamine pyrocatechol
  • SiGe
  • silicon-on-insulator
  • wafer bonding

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator. / Feijóo, D.; Bean, J. C.; Peticolas, L. J.; Feldman, Leonard C; Liang, W. C.

In: Journal of Electronic Materials, Vol. 23, No. 6, 06.1994, p. 493-496.

Research output: Contribution to journal › Article

Feijóo, D, Bean, JC, Peticolas, LJ, Feldman, LC & Liang, WC 1994, 'Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator', Journal of Electronic Materials, vol. 23, no. 6, pp. 493-496. https://doi.org/10.1007/BF02670649
Feijóo D, Bean JC, Peticolas LJ, Feldman LC, Liang WC. Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator. Journal of Electronic Materials. 1994 Jun;23(6):493-496. https://doi.org/10.1007/BF02670649
Feijóo, D. ; Bean, J. C. ; Peticolas, L. J. ; Feldman, Leonard C ; Liang, W. C. / Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator. In: Journal of Electronic Materials. 1994 ; Vol. 23, No. 6. pp. 493-496.
@article{5c7393fc6b69494aabe48af84629e007,
title = "Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator",
abstract = "The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x<- 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.",
keywords = "Bonded and etchback silicon-on-insulator (BE-SOI), etch stop, ethylene diamine pyrocatechol, SiGe, silicon-on-insulator, wafer bonding",
author = "D. Feij{\'o}o and Bean, {J. C.} and Peticolas, {L. J.} and Feldman, {Leonard C} and Liang, {W. C.}",
year = "1994",
month = "6",
doi = "10.1007/BF02670649",
language = "English",
volume = "23",
pages = "493--496",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

TY - JOUR

T1 - Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator

AU - Feijóo, D.

AU - Bean, J. C.

AU - Peticolas, L. J.

AU - Feldman, Leonard C

AU - Liang, W. C.

PY - 1994/6

Y1 - 1994/6

N2 - The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x<- 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.

AB - The etch rate in ethylene diamine pyrocatechol of Si1-xGe1-x (0.2 ≤ x<- 0.3) etch stops grown by molecular beam epitaxy was determined using Rutherford backscattering spectrometry. Etch rate selectivities as high as 390 were measured. Such etch stops allow for higher bonding temperatures than those possible with currently used boron-based etch stops. Defect etching was used to determine the maximal thickness of dislocation-free layers.

KW - Bonded and etchback silicon-on-insulator (BE-SOI)

KW - etch stop

KW - ethylene diamine pyrocatechol

KW - SiGe

KW - silicon-on-insulator

KW - wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=51249169422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51249169422&partnerID=8YFLogxK

U2 - 10.1007/BF02670649

DO - 10.1007/BF02670649

M3 - Article

VL - 23

SP - 493

EP - 496

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -

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