Epitaxial stabilization of orthorhombic cuprous oxide films on MgO(110)

Paul R. Markworth, Robert P. H. Chang, Y. Sun, G. K. Wong, J. B. Ketterson

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Abstract

Continuous epitaxial films of cuprous oxide (Cu2O) have been formed by the thermal oxidation of 1.5-μm-thick Cu metal films deposited on MgO(110) substrates. These films melted at 1118 °C in air, in agreement with equilibrium phase diagrams. Upon cooling from the liquid, a highly crystalline, epitaxial, 2.5-μm-thick Cu2O film was formed. X-ray diffraction spectroscopy revealed that the Cu2O film crystal structure was orthorhombically distorted from the bulk cubic crystal structure. High-resolution transmission electron microscopy showed that the film is coherent, and energy dispersive x-ray spectroscopy showed that interdiffusion is limited to the interface. These results suggest that a new epitaxially stabilized phase of Cu2O has been formed.

Original languageEnglish
Pages (from-to)914-921
Number of pages8
JournalJournal of Materials Research
Volume16
Issue number4
Publication statusPublished - Apr 2001

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Markworth, P. R., Chang, R. P. H., Sun, Y., Wong, G. K., & Ketterson, J. B. (2001). Epitaxial stabilization of orthorhombic cuprous oxide films on MgO(110). Journal of Materials Research, 16(4), 914-921.