Abstract
Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.
| Original language | English |
|---|---|
| Pages (from-to) | 1643-1646 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 70 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1993 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Equilibrium shape of Si. / Eaglesham, D. J.; White, A. E.; Feldman, Leonard C; Moriya, N.; Jacobson, D. C.
In: Physical Review Letters, Vol. 70, No. 11, 1993, p. 1643-1646.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Equilibrium shape of Si
AU - Eaglesham, D. J.
AU - White, A. E.
AU - Feldman, Leonard C
AU - Moriya, N.
AU - Jacobson, D. C.
PY - 1993
Y1 - 1993
N2 - Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.
AB - Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.
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UR - http://www.scopus.com/inward/citedby.url?scp=0000163037&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.70.1643
DO - 10.1103/PhysRevLett.70.1643
M3 - Article
VL - 70
SP - 1643
EP - 1646
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 11
ER -