Equilibrium shape of Si

D. J. Eaglesham; A. E. White; L. C. Feldman; N. Moriya; D. C. Jacobson

doi:10.1103/PhysRevLett.70.1643

Equilibrium shape of Si

D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, D. C. Jacobson

Rutgers University

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456 Citations (Scopus)

Abstract

Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.

Original language	English
Pages (from-to)	1643-1646
Number of pages	4
Journal	Physical review letters
Volume	70
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevLett.70.1643
Publication status	Published - Jan 1 1993

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Eaglesham, D. J., White, A. E., Feldman, L. C., Moriya, N., & Jacobson, D. C. (1993). Equilibrium shape of Si. Physical review letters, 70(11), 1643-1646. https://doi.org/10.1103/PhysRevLett.70.1643

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10.1103/PhysRevLett.70.1643