Equilibrium shape of Si

D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, D. C. Jacobson

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461 Citations (Scopus)

Abstract

Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.

Original languageEnglish
Pages (from-to)1643-1646
Number of pages4
JournalPhysical review letters
Volume70
Issue number11
DOIs
Publication statusPublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Eaglesham, D. J., White, A. E., Feldman, L. C., Moriya, N., & Jacobson, D. C. (1993). Equilibrium shape of Si. Physical review letters, 70(11), 1643-1646. https://doi.org/10.1103/PhysRevLett.70.1643