Equilibrium shape of Si

D. J. Eaglesham, A. E. White, Leonard C Feldman, N. Moriya, D. C. Jacobson

Research output: Contribution to journalArticle

446 Citations (Scopus)

Abstract

Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.

Original languageEnglish
Pages (from-to)1643-1646
Number of pages4
JournalPhysical Review Letters
Volume70
Issue number11
DOIs
Publication statusPublished - 1993

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voids
cusps
surface energy
atoms
implantation
microscopes
annealing
scanning
curves
predictions
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Eaglesham, D. J., White, A. E., Feldman, L. C., Moriya, N., & Jacobson, D. C. (1993). Equilibrium shape of Si. Physical Review Letters, 70(11), 1643-1646. https://doi.org/10.1103/PhysRevLett.70.1643

Equilibrium shape of Si. / Eaglesham, D. J.; White, A. E.; Feldman, Leonard C; Moriya, N.; Jacobson, D. C.

In: Physical Review Letters, Vol. 70, No. 11, 1993, p. 1643-1646.

Research output: Contribution to journalArticle

Eaglesham, DJ, White, AE, Feldman, LC, Moriya, N & Jacobson, DC 1993, 'Equilibrium shape of Si', Physical Review Letters, vol. 70, no. 11, pp. 1643-1646. https://doi.org/10.1103/PhysRevLett.70.1643
Eaglesham DJ, White AE, Feldman LC, Moriya N, Jacobson DC. Equilibrium shape of Si. Physical Review Letters. 1993;70(11):1643-1646. https://doi.org/10.1103/PhysRevLett.70.1643
Eaglesham, D. J. ; White, A. E. ; Feldman, Leonard C ; Moriya, N. ; Jacobson, D. C. / Equilibrium shape of Si. In: Physical Review Letters. 1993 ; Vol. 70, No. 11. pp. 1643-1646.
@article{3d7914451f5b4e01b34ea49c472a77bd,
title = "Equilibrium shape of Si",
abstract = "Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.",
author = "Eaglesham, {D. J.} and White, {A. E.} and Feldman, {Leonard C} and N. Moriya and Jacobson, {D. C.}",
year = "1993",
doi = "10.1103/PhysRevLett.70.1643",
language = "English",
volume = "70",
pages = "1643--1646",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "11",

}

TY - JOUR

T1 - Equilibrium shape of Si

AU - Eaglesham, D. J.

AU - White, A. E.

AU - Feldman, Leonard C

AU - Moriya, N.

AU - Jacobson, D. C.

PY - 1993

Y1 - 1993

N2 - Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.

AB - Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve () for Si. (111) is the global minimum, with (100)1.1(111) and all other cusps on the surface being relatively small. The experimental () is compared with theoretical predictions and earlier experiments. Step energies obtained from d/d are 2810 meV/atom on (100) and 14020 meV/atom on (111); these values are compared with scanning tunneling microscope experiments.

UR - http://www.scopus.com/inward/record.url?scp=0000163037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000163037&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.70.1643

DO - 10.1103/PhysRevLett.70.1643

M3 - Article

VL - 70

SP - 1643

EP - 1646

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 11

ER -