Erratum: Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s)

Hui Huang, Zhihua Chen, Rocio Ponce Ortiz, Christopher Newman, Hakan Usta, Sylvia Lou, Jangdae Youn, Yong Young Noh, Kang Jun Baeg, Lin X. Chen, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)4160
Number of pages1
JournalJournal of the American Chemical Society
Volume135
Issue number10
DOIs
Publication statusPublished - Mar 13 2013

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Semiconductors
Polymers
Electrons
Semiconductor materials

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Erratum : Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s). / Huang, Hui; Chen, Zhihua; Ortiz, Rocio Ponce; Newman, Christopher; Usta, Hakan; Lou, Sylvia; Youn, Jangdae; Noh, Yong Young; Baeg, Kang Jun; Chen, Lin X.; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 135, No. 10, 13.03.2013, p. 4160.

Research output: Contribution to journalArticle

Huang, Hui ; Chen, Zhihua ; Ortiz, Rocio Ponce ; Newman, Christopher ; Usta, Hakan ; Lou, Sylvia ; Youn, Jangdae ; Noh, Yong Young ; Baeg, Kang Jun ; Chen, Lin X. ; Facchetti, Antonio ; Marks, Tobin J. / Erratum : Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s). In: Journal of the American Chemical Society. 2013 ; Vol. 135, No. 10. pp. 4160.
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