Erratum: Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s)

Hui Huang; Zhihua Chen; Rocio Ponce Ortiz; Christopher Newman; Hakan Usta; Sylvia Lou; Jangdae Youn; Yong Young Noh; Kang Jun Baeg; Lin X. Chen; Antonio Facchetti; Tobin J Marks

doi:10.1021/ja400834j

Erratum

Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s)

Hui Huang, Zhihua Chen, Rocio Ponce Ortiz, Christopher Newman, Hakan Usta, Sylvia Lou, Jangdae Youn, Yong Young Noh, Kang Jun Baeg, Lin X. Chen, Antonio Facchetti, Tobin J Marks

Northwestern University

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	4160
Number of pages	1
Journal	Journal of the American Chemical Society
Volume	135
Issue number	10
DOIs	https://doi.org/10.1021/ja400834j
Publication status	Published - Mar 13 2013

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Polymers

Semiconductor materials

Electrons

ASJC Scopus subject areas

Chemistry(all)
Catalysis
Biochemistry
Colloid and Surface Chemistry

Cite this

Huang, H., Chen, Z., Ortiz, R. P., Newman, C., Usta, H., Lou, S., ... Marks, T. J. (2013). Erratum: Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s). Journal of the American Chemical Society, 135(10), 4160. https://doi.org/10.1021/ja400834j

Erratum : Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s). / Huang, Hui; Chen, Zhihua; Ortiz, Rocio Ponce; Newman, Christopher; Usta, Hakan; Lou, Sylvia; Youn, Jangdae; Noh, Yong Young; Baeg, Kang Jun; Chen, Lin X.; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 135, No. 10, 13.03.2013, p. 4160.

Research output: Contribution to journal › Article

Huang, H, Chen, Z, Ortiz, RP, Newman, C, Usta, H, Lou, S, Youn, J, Noh, YY, Baeg, KJ, Chen, LX, Facchetti, A & Marks, TJ 2013, 'Erratum: Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s)', Journal of the American Chemical Society, vol. 135, no. 10, pp. 4160. https://doi.org/10.1021/ja400834j

Huang H, Chen Z, Ortiz RP, Newman C, Usta H, Lou S et al. Erratum: Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s). Journal of the American Chemical Society. 2013 Mar 13;135(10):4160. https://doi.org/10.1021/ja400834j

Huang, Hui ; Chen, Zhihua ; Ortiz, Rocio Ponce ; Newman, Christopher ; Usta, Hakan ; Lou, Sylvia ; Youn, Jangdae ; Noh, Yong Young ; Baeg, Kang Jun ; Chen, Lin X. ; Facchetti, Antonio ; Marks, Tobin J. / Erratum : Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s). In: Journal of the American Chemical Society. 2013 ; Vol. 135, No. 10. pp. 4160.

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Access to Document

10.1021/ja400834j