Erratum

Pressure dependence of SiO2 growth kinetics and electrical properties on SiC (Journal of Applied Physics (2008) 103 (023522))

E. A. Ray, J. Rozen, S. Dhar, Leonard C Feldman, J. R. Williams

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Article number039908
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - 2008

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pressure dependence
electrical properties
physics
kinetics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Erratum : Pressure dependence of SiO2 growth kinetics and electrical properties on SiC (Journal of Applied Physics (2008) 103 (023522)). / Ray, E. A.; Rozen, J.; Dhar, S.; Feldman, Leonard C; Williams, J. R.

In: Journal of Applied Physics, Vol. 104, No. 3, 039908, 2008.

Research output: Contribution to journalArticle

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