Erratum: Pressure dependence of SiO2 growth kinetics and electrical properties on SiC (Journal of Applied Physics (2008) 103 (023522))

E. A. Ray, J. Rozen, S. Dhar, L. C. Feldman, J. R. Williams

Research output: Contribution to journalComment/debate

1 Citation (Scopus)
Original languageEnglish
Article number039908
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - Aug 25 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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