Original language | English |
---|---|
Article number | 139902 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2006 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Erratum : Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510)). / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.
In: Applied Physics Letters, Vol. 89, No. 13, 139902, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Erratum
T2 - Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510))
AU - Ju, Sanghyun
AU - Lee, Kangho
AU - Janes, David B.
AU - Dwivedi, Ramesh C.
AU - Baffour-Awuah, Habibah
AU - Wilkins, R.
AU - Yoon, Myung Han
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2006
Y1 - 2006
UR - http://www.scopus.com/inward/record.url?scp=33749242197&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749242197&partnerID=8YFLogxK
U2 - 10.1063/1.2356893
DO - 10.1063/1.2356893
M3 - Article
AN - SCOPUS:33749242197
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 139902
ER -