Erratum: Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510))

Sanghyun Ju, Kangho Lee, David B. Janes, Ramesh C. Dwivedi, Habibah Baffour-Awuah, R. Wilkins, Myung Han Yoon, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Article number139902
JournalApplied Physics Letters
Volume89
Issue number13
DOIs
Publication statusPublished - 2006

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nanowires
transistors
hardness
physics
protons
radiation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Erratum : Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510)). / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.

In: Applied Physics Letters, Vol. 89, No. 13, 139902, 2006.

Research output: Contribution to journalArticle

Ju, Sanghyun ; Lee, Kangho ; Janes, David B. ; Dwivedi, Ramesh C. ; Baffour-Awuah, Habibah ; Wilkins, R. ; Yoon, Myung Han ; Facchetti, Antonio ; Marks, Tobin J. / Erratum : Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510)). In: Applied Physics Letters. 2006 ; Vol. 89, No. 13.
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