Erratum: Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510))

Sanghyun Ju; Kangho Lee; David B. Janes; Ramesh C. Dwivedi; Habibah Baffour-Awuah; R. Wilkins; Myung Han Yoon; Antonio Facchetti; Tobin J. Marks

doi:10.1063/1.2356893

Erratum: Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510))

Sanghyun Ju, Kangho Lee, David B. Janes, Ramesh C. Dwivedi, Habibah Baffour-Awuah, R. Wilkins, Myung Han Yoon, Antonio Facchetti, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Comment/debate

1 Citation (Scopus)

Original language	English
Article number	139902
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2356893
Publication status	Published - Oct 6 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2356893

Cite this

Ju, S., Lee, K., Janes, D. B., Dwivedi, R. C., Baffour-Awuah, H., Wilkins, R., Yoon, M. H., Facchetti, A., & Marks, T. J. (2006). Erratum: Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510)). Applied Physics Letters, 89(13), [139902]. https://doi.org/10.1063/1.2356893

Erratum : Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510)). / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.

In: Applied Physics Letters, Vol. 89, No. 13, 139902, 06.10.2006.

Research output: Contribution to journal › Comment/debate

Ju, Sanghyun ; Lee, Kangho ; Janes, David B. ; Dwivedi, Ramesh C. ; Baffour-Awuah, Habibah ; Wilkins, R. ; Yoon, Myung Han ; Facchetti, Antonio ; Marks, Tobin J. / Erratum : Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510)). In: Applied Physics Letters. 2006 ; Vol. 89, No. 13.

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