Eu7Ga6Sb8: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

Seon Mi Park, Sung Jin Kim, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The Zintl phase Eu7Ga6Sb8 was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17)Å, b=17.2876(19)Å, c=17.9200(19)Å, and Z=8. In Eu7Ga 6Sb8, the anionic framework forms infinite chains of [Ga6Sb8]14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu2+ atoms and also within the sheet, Eu2+ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga4)6+ and dimers (Ga2)4+ connected by Sb atoms. The compound is a narrow band-gap semiconductor with Eg∼0.6eV and satisfies the classical Zintl concept. Extended Hückel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu 7Ga6Sb8 show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.

Original languageEnglish
Pages (from-to)2867-2874
Number of pages8
JournalJournal of Solid State Chemistry
Volume177
Issue number8
DOIs
Publication statusPublished - Aug 2004

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Gallium
gallium
Atoms
atoms
Magnetic susceptibility
Dimers
Band structure
narrowband
dimers
Semiconductor materials
magnetic permeability
interactions

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

Eu7Ga6Sb8 : A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains. / Park, Seon Mi; Kim, Sung Jin; Kanatzidis, Mercouri G.

In: Journal of Solid State Chemistry, Vol. 177, No. 8, 08.2004, p. 2867-2874.

Research output: Contribution to journalArticle

@article{d295ff4f3dd649908b38cdcafa33e964,
title = "Eu7Ga6Sb8: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains",
abstract = "The Zintl phase Eu7Ga6Sb8 was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17){\AA}, b=17.2876(19){\AA}, c=17.9200(19){\AA}, and Z=8. In Eu7Ga 6Sb8, the anionic framework forms infinite chains of [Ga6Sb8]14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu2+ atoms and also within the sheet, Eu2+ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga4)6+ and dimers (Ga2)4+ connected by Sb atoms. The compound is a narrow band-gap semiconductor with Eg∼0.6eV and satisfies the classical Zintl concept. Extended H{\"u}ckel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu 7Ga6Sb8 show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.",
author = "Park, {Seon Mi} and Kim, {Sung Jin} and Kanatzidis, {Mercouri G}",
year = "2004",
month = "8",
doi = "10.1016/j.jssc.2004.04.025",
language = "English",
volume = "177",
pages = "2867--2874",
journal = "Journal of Solid State Chemistry",
issn = "0022-4596",
publisher = "Academic Press Inc.",
number = "8",

}

TY - JOUR

T1 - Eu7Ga6Sb8

T2 - A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

AU - Park, Seon Mi

AU - Kim, Sung Jin

AU - Kanatzidis, Mercouri G

PY - 2004/8

Y1 - 2004/8

N2 - The Zintl phase Eu7Ga6Sb8 was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17)Å, b=17.2876(19)Å, c=17.9200(19)Å, and Z=8. In Eu7Ga 6Sb8, the anionic framework forms infinite chains of [Ga6Sb8]14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu2+ atoms and also within the sheet, Eu2+ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga4)6+ and dimers (Ga2)4+ connected by Sb atoms. The compound is a narrow band-gap semiconductor with Eg∼0.6eV and satisfies the classical Zintl concept. Extended Hückel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu 7Ga6Sb8 show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.

AB - The Zintl phase Eu7Ga6Sb8 was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17)Å, b=17.2876(19)Å, c=17.9200(19)Å, and Z=8. In Eu7Ga 6Sb8, the anionic framework forms infinite chains of [Ga6Sb8]14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu2+ atoms and also within the sheet, Eu2+ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga4)6+ and dimers (Ga2)4+ connected by Sb atoms. The compound is a narrow band-gap semiconductor with Eg∼0.6eV and satisfies the classical Zintl concept. Extended Hückel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu 7Ga6Sb8 show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.

UR - http://www.scopus.com/inward/record.url?scp=3342875693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3342875693&partnerID=8YFLogxK

U2 - 10.1016/j.jssc.2004.04.025

DO - 10.1016/j.jssc.2004.04.025

M3 - Article

AN - SCOPUS:3342875693

VL - 177

SP - 2867

EP - 2874

JO - Journal of Solid State Chemistry

JF - Journal of Solid State Chemistry

SN - 0022-4596

IS - 8

ER -