Evaluation of defects in cuprous oxide through exciton luminescence imaging

Laszlo Frazer, Erik J. Lenferink, Kelvin B. Chang, Kenneth R Poeppelmeier, Nathaniel P. Stern, John B. Ketterson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The various decay mechanisms of excitons in cuprous oxide (Cu2O) are highly sensitive to defects which can relax selection rules. Here we report cryogenic hyperspectral imaging of exciton luminescence from cuprous oxide crystals grown via the floating zone method showing that the samples have few defects. Some locations, however, show strain splitting of the 1s orthoexciton triplet polariton luminescence. Strain is reduced by annealing. In addition, annealing causes annihilation of oxygen and copper vacancies, which leads to a negative correlation between luminescence of unlike vacancies.

Original languageEnglish
Pages (from-to)294-302
Number of pages9
JournalJournal of Luminescence
Volume159
DOIs
Publication statusPublished - 2015

Fingerprint

Luminescence
excitons
luminescence
Imaging techniques
Defects
Vacancies
oxides
evaluation
defects
Annealing
annealing
polaritons
Cryogenics
floating
cryogenics
Copper
Oxygen
copper
Crystals
causes

Keywords

  • CuO
  • Cuprous oxide
  • Excitons
  • Hyperspectral imaging
  • Stress
  • Vacancies

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Chemistry(all)
  • Biochemistry
  • Biophysics

Cite this

Evaluation of defects in cuprous oxide through exciton luminescence imaging. / Frazer, Laszlo; Lenferink, Erik J.; Chang, Kelvin B.; Poeppelmeier, Kenneth R; Stern, Nathaniel P.; Ketterson, John B.

In: Journal of Luminescence, Vol. 159, 2015, p. 294-302.

Research output: Contribution to journalArticle

Frazer, Laszlo ; Lenferink, Erik J. ; Chang, Kelvin B. ; Poeppelmeier, Kenneth R ; Stern, Nathaniel P. ; Ketterson, John B. / Evaluation of defects in cuprous oxide through exciton luminescence imaging. In: Journal of Luminescence. 2015 ; Vol. 159. pp. 294-302.
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