TY - JOUR
T1 - Evaluation of sputtered nickel oxide, cobalt oxide and nickel-cobalt oxide on n-type silicon photoanodes for solar-driven O2(g) evolution from water
AU - Yang, Fan
AU - Zhou, Xinghao
AU - Plymale, Noah T.
AU - Sun, Ke
AU - Lewis, Nathan S.
N1 - Funding Information:
This work was supported through the Office of Science of the U.S. Department of Energy (DOE) under award DE-SC0004993 to the Joint Center for Articial Photosynthesis (JCAP), a DOE funded Energy Innovation Hub. UV-vis absorption and Atomic Force Microscope studies were performed at the Molecular Materials Resource Center (MMRC) in the Beckman Institute at the California Institute of Technology. Paul Kempler and Weilai Yu are thanked for assistance with editing the manuscript.
PY - 2020/7/28
Y1 - 2020/7/28
N2 - Thin films of nickel oxide (NiOx), cobalt oxide (CoOx) and nickel-cobalt oxide (NiCoOx) were sputtered onto n-Si(111) surfaces to produce a series of integrated, protected Si photoanodes that did not require deposition of a separate heterogeneous electrocatalyst for water oxidation. The p-type transparent conductive oxides (p-TCOs) acted as multi-functional transparent, antireflective, electrically conductive, chemically stable coatings that also were active electrocatalysts for the oxidation of water to O2(g). Relative to the formal potential for water oxidation to O2, Eo′(O2/H2O), under simulated Air Mass (AM)1.5 illumination the p-TCO-coated n-Si(111) photoanodes produced mutually similar open-circuit potentials of -270 ± 20 mV, but different photocurrent densities at Eo′(O2/H2O), of 28 ± 0.3 mA cm-2 for NiOx, 18 ± 0.3 mA cm-2 for CoOx and 24 ± 0.5 mA cm-2 for NiCoOx. The p-TCOs all provided protection from oxide growth for extended time periods, and produced stable photocurrent densities from n-Si in 1.0 M KOH(aq) (ACS grade) under potential control at Eo′(O2/H2O) for >400 h of continuous operation under 100 mW cm-2 of simulated AM1.5 illumination.
AB - Thin films of nickel oxide (NiOx), cobalt oxide (CoOx) and nickel-cobalt oxide (NiCoOx) were sputtered onto n-Si(111) surfaces to produce a series of integrated, protected Si photoanodes that did not require deposition of a separate heterogeneous electrocatalyst for water oxidation. The p-type transparent conductive oxides (p-TCOs) acted as multi-functional transparent, antireflective, electrically conductive, chemically stable coatings that also were active electrocatalysts for the oxidation of water to O2(g). Relative to the formal potential for water oxidation to O2, Eo′(O2/H2O), under simulated Air Mass (AM)1.5 illumination the p-TCO-coated n-Si(111) photoanodes produced mutually similar open-circuit potentials of -270 ± 20 mV, but different photocurrent densities at Eo′(O2/H2O), of 28 ± 0.3 mA cm-2 for NiOx, 18 ± 0.3 mA cm-2 for CoOx and 24 ± 0.5 mA cm-2 for NiCoOx. The p-TCOs all provided protection from oxide growth for extended time periods, and produced stable photocurrent densities from n-Si in 1.0 M KOH(aq) (ACS grade) under potential control at Eo′(O2/H2O) for >400 h of continuous operation under 100 mW cm-2 of simulated AM1.5 illumination.
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U2 - 10.1039/d0ta03725g
DO - 10.1039/d0ta03725g
M3 - Article
AN - SCOPUS:85088692954
VL - 8
SP - 13955
EP - 13963
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
SN - 2050-7488
IS - 28
ER -