Evidence against surface state limitations on efficiency of p-Si/CH 3CN junctions

Charles M. Lieber, Chris M. Gronet, Nathan S Lewis

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report here the first efficient p-type Si-based semiconductor-liquid junction system. p-Type Si photocathodes have been previously reported to yield open circuit photovoltages, Voc, of 0.38-0.40 V with several redox systems1-8. Photocurrent-voltage studies of p-Si cathodes in CH 3CN solvent have demonstrated 2.5% efficiency for conversion of 632.8-nm light to electricity with the N,N′-dimethyl-4,4′- bipyridinium2+/+ redox system1, and 0.5-2.4% with other macrocyclic complexes7,8. Such modest energy conversion efficiencies for small band gap semiconductors have been attributed to surface states which pin the semiconductor Fermi level6-9 and promote recombination processes10. However, we find that p-type Si/CH3CN interfaces can yield solar conversion efficiencies in excess of 10%, and can display open circuit photovoltages within 0.08 V of the theoretical limit for an ideal junction.

Original languageEnglish
Pages (from-to)533-534
Number of pages2
JournalNature
Volume307
Issue number5951
DOIs
Publication statusPublished - 1984

Fingerprint

photovoltages
methylidyne
energy conversion efficiency
photocathodes
electricity
photocurrents
cathodes
electric potential
liquids

ASJC Scopus subject areas

  • General

Cite this

Evidence against surface state limitations on efficiency of p-Si/CH 3CN junctions. / Lieber, Charles M.; Gronet, Chris M.; Lewis, Nathan S.

In: Nature, Vol. 307, No. 5951, 1984, p. 533-534.

Research output: Contribution to journalArticle

Lieber, Charles M. ; Gronet, Chris M. ; Lewis, Nathan S. / Evidence against surface state limitations on efficiency of p-Si/CH 3CN junctions. In: Nature. 1984 ; Vol. 307, No. 5951. pp. 533-534.
@article{e9bfde926469427894814b4d27bbd4c1,
title = "Evidence against surface state limitations on efficiency of p-Si/CH 3CN junctions",
abstract = "We report here the first efficient p-type Si-based semiconductor-liquid junction system. p-Type Si photocathodes have been previously reported to yield open circuit photovoltages, Voc, of 0.38-0.40 V with several redox systems1-8. Photocurrent-voltage studies of p-Si cathodes in CH 3CN solvent have demonstrated 2.5{\%} efficiency for conversion of 632.8-nm light to electricity with the N,N′-dimethyl-4,4′- bipyridinium2+/+ redox system1, and 0.5-2.4{\%} with other macrocyclic complexes7,8. Such modest energy conversion efficiencies for small band gap semiconductors have been attributed to surface states which pin the semiconductor Fermi level6-9 and promote recombination processes10. However, we find that p-type Si/CH3CN interfaces can yield solar conversion efficiencies in excess of 10{\%}, and can display open circuit photovoltages within 0.08 V of the theoretical limit for an ideal junction.",
author = "Lieber, {Charles M.} and Gronet, {Chris M.} and Lewis, {Nathan S}",
year = "1984",
doi = "10.1038/307533a0",
language = "English",
volume = "307",
pages = "533--534",
journal = "Nature",
issn = "0028-0836",
publisher = "Nature Publishing Group",
number = "5951",

}

TY - JOUR

T1 - Evidence against surface state limitations on efficiency of p-Si/CH 3CN junctions

AU - Lieber, Charles M.

AU - Gronet, Chris M.

AU - Lewis, Nathan S

PY - 1984

Y1 - 1984

N2 - We report here the first efficient p-type Si-based semiconductor-liquid junction system. p-Type Si photocathodes have been previously reported to yield open circuit photovoltages, Voc, of 0.38-0.40 V with several redox systems1-8. Photocurrent-voltage studies of p-Si cathodes in CH 3CN solvent have demonstrated 2.5% efficiency for conversion of 632.8-nm light to electricity with the N,N′-dimethyl-4,4′- bipyridinium2+/+ redox system1, and 0.5-2.4% with other macrocyclic complexes7,8. Such modest energy conversion efficiencies for small band gap semiconductors have been attributed to surface states which pin the semiconductor Fermi level6-9 and promote recombination processes10. However, we find that p-type Si/CH3CN interfaces can yield solar conversion efficiencies in excess of 10%, and can display open circuit photovoltages within 0.08 V of the theoretical limit for an ideal junction.

AB - We report here the first efficient p-type Si-based semiconductor-liquid junction system. p-Type Si photocathodes have been previously reported to yield open circuit photovoltages, Voc, of 0.38-0.40 V with several redox systems1-8. Photocurrent-voltage studies of p-Si cathodes in CH 3CN solvent have demonstrated 2.5% efficiency for conversion of 632.8-nm light to electricity with the N,N′-dimethyl-4,4′- bipyridinium2+/+ redox system1, and 0.5-2.4% with other macrocyclic complexes7,8. Such modest energy conversion efficiencies for small band gap semiconductors have been attributed to surface states which pin the semiconductor Fermi level6-9 and promote recombination processes10. However, we find that p-type Si/CH3CN interfaces can yield solar conversion efficiencies in excess of 10%, and can display open circuit photovoltages within 0.08 V of the theoretical limit for an ideal junction.

UR - http://www.scopus.com/inward/record.url?scp=0000169250&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000169250&partnerID=8YFLogxK

U2 - 10.1038/307533a0

DO - 10.1038/307533a0

M3 - Article

VL - 307

SP - 533

EP - 534

JO - Nature

JF - Nature

SN - 0028-0836

IS - 5951

ER -