Abstract
Using ultrafast time-resolved THz spectroscopy, we observe two-orders-of-magnitude increase in the relaxation rate in semiconducting epitaxial graphene relative to pristine epitaxial graphene, attributed to enhancement of the optical-phonon-mediated carrier cooling and recombination over a wide range of electron temperatures.
| Original language | English |
|---|---|
| Title of host publication | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781943580118 |
| Publication status | Published - Dec 16 2016 |
| Event | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States Duration: Jun 5 2016 → Jun 10 2016 |
Other
| Other | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 6/5/16 → 6/10/16 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Evidence for Bandgap Opening in Buckled Epitaxial Graphene from Ultrafast Time-Resolved Terahertz Spectroscopy. / Mihnev, Momchil T.; Wang, Feng; Liu, Gang; Rothwell, Sara; Cohen, Philip I.; Feldman, Leonard C; Conrad, Edward H.; Norris, Theodore B.
2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7787881.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Evidence for Bandgap Opening in Buckled Epitaxial Graphene from Ultrafast Time-Resolved Terahertz Spectroscopy
AU - Mihnev, Momchil T.
AU - Wang, Feng
AU - Liu, Gang
AU - Rothwell, Sara
AU - Cohen, Philip I.
AU - Feldman, Leonard C
AU - Conrad, Edward H.
AU - Norris, Theodore B.
PY - 2016/12/16
Y1 - 2016/12/16
N2 - Using ultrafast time-resolved THz spectroscopy, we observe two-orders-of-magnitude increase in the relaxation rate in semiconducting epitaxial graphene relative to pristine epitaxial graphene, attributed to enhancement of the optical-phonon-mediated carrier cooling and recombination over a wide range of electron temperatures.
AB - Using ultrafast time-resolved THz spectroscopy, we observe two-orders-of-magnitude increase in the relaxation rate in semiconducting epitaxial graphene relative to pristine epitaxial graphene, attributed to enhancement of the optical-phonon-mediated carrier cooling and recombination over a wide range of electron temperatures.
UR - http://www.scopus.com/inward/record.url?scp=85010693148&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010693148&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85010693148
BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -