Abstract
Using ultrafast time-resolved THz spectroscopy, we observe two-orders-of-magnitude increase in the relaxation rate in semiconducting epitaxial graphene relative to pristine epitaxial graphene, attributed to enhancement of the optical-phonon-mediated carrier cooling and recombination over a wide range of electron temperatures.
| Original language | English |
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| Title of host publication | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781943580118 |
| Publication status | Published - Dec 16 2016 |
| Event | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States Duration: Jun 5 2016 → Jun 10 2016 |
Publication series
| Name | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 |
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Other
| Other | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 |
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| Country | United States |
| City | San Jose |
| Period | 6/5/16 → 6/10/16 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Mihnev, M. T., Wang, F., Liu, G., Rothwell, S., Cohen, P. I., Feldman, L. C., Conrad, E. H., & Norris, T. B. (2016). Evidence for Bandgap Opening in Buckled Epitaxial Graphene from Ultrafast Time-Resolved Terahertz Spectroscopy. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7787881] (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc..