Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

S. D. Kosowsky, P. S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, Leonard C Feldman, P. K. Roy

Research output: Contribution to journalArticle

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Abstract

Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.

Original languageEnglish
Pages (from-to)3119-3121
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number23
Publication statusPublished - Jun 9 1997

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annealing
electron density profiles
reflectance
oxides
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kosowsky, S. D., Pershan, P. S., Krisch, K. S., Bevk, J., Green, M. L., Brasen, D., ... Roy, P. K. (1997). Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied Physics Letters, 70(23), 3119-3121.

Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. / Kosowsky, S. D.; Pershan, P. S.; Krisch, K. S.; Bevk, J.; Green, M. L.; Brasen, D.; Feldman, Leonard C; Roy, P. K.

In: Applied Physics Letters, Vol. 70, No. 23, 09.06.1997, p. 3119-3121.

Research output: Contribution to journalArticle

Kosowsky, SD, Pershan, PS, Krisch, KS, Bevk, J, Green, ML, Brasen, D, Feldman, LC & Roy, PK 1997, 'Evidence of annealing effects on a high-density Si/SiO2 interfacial layer', Applied Physics Letters, vol. 70, no. 23, pp. 3119-3121.
Kosowsky SD, Pershan PS, Krisch KS, Bevk J, Green ML, Brasen D et al. Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied Physics Letters. 1997 Jun 9;70(23):3119-3121.
Kosowsky, S. D. ; Pershan, P. S. ; Krisch, K. S. ; Bevk, J. ; Green, M. L. ; Brasen, D. ; Feldman, Leonard C ; Roy, P. K. / Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. In: Applied Physics Letters. 1997 ; Vol. 70, No. 23. pp. 3119-3121.
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