Abstract
Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.
Original language | English |
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Pages (from-to) | 3119-3121 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 23 |
DOIs | |
Publication status | Published - Jun 9 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)