Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

S. D. Kosowsky; P. S. Pershan; K. S. Krisch; J. Bevk; M. L. Green; D. Brasen; L. C. Feldman; P. K. Roy

doi:10.1063/1.119090

Evidence of annealing effects on a high-density Si/SiO₂ interfacial layer

S. D. Kosowsky, P. S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman, P. K. Roy

Rutgers University

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

Thermally grown Si(001)/SiO₂ samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO₂ interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.

Original language	English
Pages (from-to)	3119-3121
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	23
DOIs	https://doi.org/10.1063/1.119090
Publication status	Published - Jun 9 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-{\AA}-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.",

author = "Kosowsky, {S. D.} and Pershan, {P. S.} and Krisch, {K. S.} and J. Bevk and Green, {M. L.} and D. Brasen and Feldman, {L. C.} and Roy, {P. K.}",

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AU - Kosowsky, S. D.

AU - Pershan, P. S.

AU - Krisch, K. S.

AU - Bevk, J.

AU - Green, M. L.

AU - Brasen, D.

AU - Feldman, L. C.

AU - Roy, P. K.

PY - 1997/6/9

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AB - Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.

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