Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

S. D. Kosowsky; P. S. Pershan; K. S. Krisch; J. Bevk; M. L. Green; D. Brasen; L. C. Feldman; P. K. Roy

doi:10.1063/1.119090

Evidence of annealing effects on a high-density Si/SiO₂ interfacial layer

S. D. Kosowsky, P. S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman, P. K. Roy

Rutgers University

Research output: Contribution to journal › Article

74 Citations (Scopus)

Abstract

Thermally grown Si(001)/SiO₂ samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO₂ interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.

Original language	English
Pages (from-to)	3119-3121
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	23
DOIs	https://doi.org/10.1063/1.119090
Publication status	Published - Jun 9 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kosowsky, S. D., Pershan, P. S., Krisch, K. S., Bevk, J., Green, M. L., Brasen, D., Feldman, L. C., & Roy, P. K. (1997). Evidence of annealing effects on a high-density Si/SiO₂ interfacial layer. Applied Physics Letters, 70(23), 3119-3121. https://doi.org/10.1063/1.119090

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AU - Green, M. L.

AU - Brasen, D.

AU - Feldman, L. C.

AU - Roy, P. K.

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