Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

S. D. Kosowsky, P. S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman, P. K. Roy

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Abstract

Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.

Original languageEnglish
Pages (from-to)3119-3121
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number23
DOIs
Publication statusPublished - Jun 9 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kosowsky, S. D., Pershan, P. S., Krisch, K. S., Bevk, J., Green, M. L., Brasen, D., Feldman, L. C., & Roy, P. K. (1997). Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied Physics Letters, 70(23), 3119-3121. https://doi.org/10.1063/1.119090