Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

John A. Belot, Richard J. McNeely, Anchuan Wang, Charles J. Reedy, Tobin J Marks, Glenn P A Yap, Arnold L. Rheingold

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

Original languageEnglish
Pages (from-to)12-15
Number of pages4
JournalJournal of Materials Research
Volume14
Issue number1
Publication statusPublished - 1999

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Organic Chemicals
Yttria stabilized zirconia
Organic chemicals
Film growth
yttria-stabilized zirconia
Amides
Zirconium
amides
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
routes
metathesis
moisture
imines
Schiff Bases
communication
ligands
air
Moisture

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth. / Belot, John A.; McNeely, Richard J.; Wang, Anchuan; Reedy, Charles J.; Marks, Tobin J; Yap, Glenn P A; Rheingold, Arnold L.

In: Journal of Materials Research, Vol. 14, No. 1, 1999, p. 12-15.

Research output: Contribution to journalArticle

Belot, John A. ; McNeely, Richard J. ; Wang, Anchuan ; Reedy, Charles J. ; Marks, Tobin J ; Yap, Glenn P A ; Rheingold, Arnold L. / Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth. In: Journal of Materials Research. 1999 ; Vol. 14, No. 1. pp. 12-15.
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AU - Belot, John A.

AU - McNeely, Richard J.

AU - Wang, Anchuan

AU - Reedy, Charles J.

AU - Marks, Tobin J

AU - Yap, Glenn P A

AU - Rheingold, Arnold L.

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AB - This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

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