TY - JOUR
T1 - Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth
AU - Belot, John A.
AU - McNeely, Richard J.
AU - Wang, Anchuan
AU - Reedy, Charles J.
AU - Marks, Tobin J.
AU - Yap, Glenn P.A.
AU - Rheingold, Arnold L.
N1 - Funding Information:
This research was supported by the National Science Foundation (DMR 91-20000) through the Science and Technology Center for Superconductivity, by NSF/ONR/DARPA (CHE-94219101/N00014-95-0717 and CHE9807042), and by the Northwestern University Materials Research Center (DMR-9632472). The University of Delaware acknowledges the National Science Foundation for their support of the purchase of the CCD-based diffractometer (CHE-9628768).
PY - 1999
Y1 - 1999
N2 - This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.
AB - This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.
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U2 - 10.1557/JMR.1999.0004
DO - 10.1557/JMR.1999.0004
M3 - Article
AN - SCOPUS:0032662178
VL - 14
SP - 12
EP - 15
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 1
ER -