Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

John A. Belot; Richard J. McNeely; Anchuan Wang; Charles J. Reedy; Tobin J Marks; Glenn P A Yap; Arnold L. Rheingold

Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

John A. Belot, Richard J. McNeely, Anchuan Wang, Charles J. Reedy, Tobin J Marks, Glenn P A Yap, Arnold L. Rheingold

Northwestern University

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)₄ and Zr(dpm)₄ (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)₂ (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl₄ or diketonate metathesis. Furthermore, Zr(tfacen)₂ is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

Original language	English
Pages (from-to)	12-15
Number of pages	4
Journal	Journal of Materials Research
Volume	14
Issue number	1
Publication status	Published - 1999

ASJC Scopus subject areas

Materials Science(all)

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Belot, J. A., McNeely, R. J., Wang, A., Reedy, C. J., Marks, T. J., Yap, G. P. A., & Rheingold, A. L. (1999). Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth. Journal of Materials Research, 14(1), 12-15.

Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth. / Belot, John A.; McNeely, Richard J.; Wang, Anchuan; Reedy, Charles J.; Marks, Tobin J; Yap, Glenn P A; Rheingold, Arnold L.

In: Journal of Materials Research, Vol. 14, No. 1, 1999, p. 12-15.

Research output: Contribution to journal › Article

Belot, John A. ; McNeely, Richard J. ; Wang, Anchuan ; Reedy, Charles J. ; Marks, Tobin J ; Yap, Glenn P A ; Rheingold, Arnold L. / Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth. In: Journal of Materials Research. 1999 ; Vol. 14, No. 1. pp. 12-15.

@article{ef44781d299f4b41a031af5ff888cea0,

title = "Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth",

abstract = "This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.",

author = "Belot, {John A.} and McNeely, {Richard J.} and Anchuan Wang and Reedy, {Charles J.} and Marks, {Tobin J} and Yap, {Glenn P A} and Rheingold, {Arnold L.}",

year = "1999",

language = "English",

volume = "14",

pages = "12--15",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "1",

}

TY - JOUR

T1 - Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

AU - Belot, John A.

AU - McNeely, Richard J.

AU - Wang, Anchuan

AU - Reedy, Charles J.

AU - Marks, Tobin J

AU - Yap, Glenn P A

AU - Rheingold, Arnold L.

PY - 1999

Y1 - 1999

N2 - This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

AB - This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

UR - http://www.scopus.com/inward/record.url?scp=0032662178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032662178&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032662178

VL - 14

SP - 12

EP - 15

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 1

ER -