Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

John A. Belot, Richard J. McNeely, Anchuan Wang, Charles J. Reedy, Tobin J Marks, Glenn P A Yap, Arnold L. Rheingold

Research output: Contribution to journalArticle

12 Citations (Scopus)


This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

Original languageEnglish
Pages (from-to)12-15
Number of pages4
JournalJournal of Materials Research
Issue number1
Publication statusPublished - 1999


ASJC Scopus subject areas

  • Materials Science(all)

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