Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Binghao Wang, Peijun Guo, Li Zeng, Xia Yu, Aritra Sil, Wei Huang, Matthew J. Leonardi, Xinan Zhang, Gang Wang, Shaofeng Lu, Zhihua Chen, Michael J. Bedzyk, Richard D Schaller, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

Abstract

Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal–oxygen–metal (M-O-M) lattice condensation then occur within 10–60 s at 200–350 °C for representative MO semiconductor [indium oxide (In 2 O 3 ), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al 2 O 3 )] films. Thus, wafer-scale CBC fabrication of IGZO-Al 2 O 3 thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm 2 V −1 s −1 and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.

Original languageEnglish
Pages (from-to)9230-9238
Number of pages9
JournalProceedings of the National Academy of Sciences of the United States of America
Volume116
Issue number19
DOIs
Publication statusPublished - May 7 2019

Fingerprint

Zinc Oxide
Oxides
Indium
Metals
Semiconductors
Growth
Aluminum Oxide
Exercise Test
Polymers
Hot Temperature
Equipment and Supplies
gallium oxide
indium oxide

Keywords

  • Blade coating
  • Combustion synthesis
  • Solution process
  • Thin-film transistor
  • Ultrashort annealing time

ASJC Scopus subject areas

  • General

Cite this

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics. / Wang, Binghao; Guo, Peijun; Zeng, Li; Yu, Xia; Sil, Aritra; Huang, Wei; Leonardi, Matthew J.; Zhang, Xinan; Wang, Gang; Lu, Shaofeng; Chen, Zhihua; Bedzyk, Michael J.; Schaller, Richard D; Marks, Tobin J; Facchetti, Antonio.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 116, No. 19, 07.05.2019, p. 9230-9238.

Research output: Contribution to journalArticle

Wang, B, Guo, P, Zeng, L, Yu, X, Sil, A, Huang, W, Leonardi, MJ, Zhang, X, Wang, G, Lu, S, Chen, Z, Bedzyk, MJ, Schaller, RD, Marks, TJ & Facchetti, A 2019, 'Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics', Proceedings of the National Academy of Sciences of the United States of America, vol. 116, no. 19, pp. 9230-9238. https://doi.org/10.1073/pnas.1901492116
Wang, Binghao ; Guo, Peijun ; Zeng, Li ; Yu, Xia ; Sil, Aritra ; Huang, Wei ; Leonardi, Matthew J. ; Zhang, Xinan ; Wang, Gang ; Lu, Shaofeng ; Chen, Zhihua ; Bedzyk, Michael J. ; Schaller, Richard D ; Marks, Tobin J ; Facchetti, Antonio. / Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics. In: Proceedings of the National Academy of Sciences of the United States of America. 2019 ; Vol. 116, No. 19. pp. 9230-9238.
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