We present detailed electronic structure calculations, based on an atomistic pseudopotential approach, for a 42 Å InP QD; theoretical results are correlated to results of experimental measurements. To better understand energy loss dynamics and mechanisms for hot carriers in QDs, we investigate relaxation between electronic levels in InP QDs with diameters significantly smaller than twice the Bohr exciton radius. Energy level spacings exceeding the optical phonon energy present the opportunity for slowed charge carrier cooling (phonon bottleneck effect). However, interaction between confined electrons and holes provides an alternate, efficient relaxation route. Therefore, we expect sufficiently fast charge separation to weaken the Coulomb interaction and decrease the electronic energy loss rate. We study electronic relaxation in InP QDs using variations of subpicosecond transient absorption spectroscopy.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - Dec 1 2003|
|Event||2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan|
Duration: Sep 30 2002 → Oct 3 2002
ASJC Scopus subject areas
- Condensed Matter Physics