Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

Y. J. Mii, Y. H. Xie, E. A. Fitzgerald, Don Monroe, F. A. Thiel, B. E. Weir, L. C. Feldman

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Abstract

A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.

Original languageEnglish
Pages (from-to)1611-1613
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number13
DOIs
Publication statusPublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Mii, Y. J., Xie, Y. H., Fitzgerald, E. A., Monroe, D., Thiel, F. A., Weir, B. E., & Feldman, L. C. (1991). Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy. Applied Physics Letters, 59(13), 1611-1613. https://doi.org/10.1063/1.106246