Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

Y. J. Mii, Y. H. Xie, E. A. Fitzgerald, Don Monroe, F. A. Thiel, B. E. Weir, Leonard C Feldman

Research output: Contribution to journal › Article

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Abstract

A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.

Original languageEnglish
Pages (from-to)1611-1613
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number13
DOIs
Publication statusPublished - 1991

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electron mobility
electron gas
molecular beam epitaxy
buffers
modulation
conduction
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mii, Y. J., Xie, Y. H., Fitzgerald, E. A., Monroe, D., Thiel, F. A., Weir, B. E., & Feldman, L. C. (1991). Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy. Applied Physics Letters, 59(13), 1611-1613. https://doi.org/10.1063/1.106246

Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy. / Mii, Y. J.; Xie, Y. H.; Fitzgerald, E. A.; Monroe, Don; Thiel, F. A.; Weir, B. E.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 59, No. 13, 1991, p. 1611-1613.

Research output: Contribution to journal › Article

Mii, YJ, Xie, YH, Fitzgerald, EA, Monroe, D, Thiel, FA, Weir, BE & Feldman, LC 1991, 'Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy', Applied Physics Letters, vol. 59, no. 13, pp. 1611-1613. https://doi.org/10.1063/1.106246
Mii YJ, Xie YH, Fitzgerald EA, Monroe D, Thiel FA, Weir BE et al. Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy. Applied Physics Letters. 1991;59(13):1611-1613. https://doi.org/10.1063/1.106246
Mii, Y. J. ; Xie, Y. H. ; Fitzgerald, E. A. ; Monroe, Don ; Thiel, F. A. ; Weir, B. E. ; Feldman, Leonard C. / Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy. In: Applied Physics Letters. 1991 ; Vol. 59, No. 13. pp. 1611-1613.
@article{4ec831f57b074922bd47c2d7a873d424,
title = "Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy",
abstract = "A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.",
author = "Mii, {Y. J.} and Xie, {Y. H.} and Fitzgerald, {E. A.} and Don Monroe and Thiel, {F. A.} and Weir, {B. E.} and Feldman, {Leonard C}",
year = "1991",
doi = "10.1063/1.106246",
language = "English",
volume = "59",
pages = "1611--1613",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

AU - Mii, Y. J.

AU - Xie, Y. H.

AU - Fitzgerald, E. A.

AU - Monroe, Don

AU - Thiel, F. A.

AU - Weir, B. E.

AU - Feldman, Leonard C

PY - 1991

Y1 - 1991

N2 - A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.

AB - A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.

UR - http://www.scopus.com/inward/record.url?scp=36449003379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449003379&partnerID=8YFLogxK

U2 - 10.1063/1.106246

DO - 10.1063/1.106246

M3 - Article

VL - 59

SP - 1611

EP - 1613

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -

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