Abstract
A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.
Original language | English |
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Pages (from-to) | 1611-1613 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 13 |
DOIs | |
Publication status | Published - 1991 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy. / Mii, Y. J.; Xie, Y. H.; Fitzgerald, E. A.; Monroe, Don; Thiel, F. A.; Weir, B. E.; Feldman, Leonard C.
In: Applied Physics Letters, Vol. 59, No. 13, 1991, p. 1611-1613.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy
AU - Mii, Y. J.
AU - Xie, Y. H.
AU - Fitzgerald, E. A.
AU - Monroe, Don
AU - Thiel, F. A.
AU - Weir, B. E.
AU - Feldman, Leonard C
PY - 1991
Y1 - 1991
N2 - A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.
AB - A modulation-doped Si/GexSi1-x structure was fabricated in which a thin Si layer is employed as the conduction channel for the two-dimensional electron gas. The strained heterostructure is fabricated on top of a low threading dislocation density, totally relaxed, Ge xSi1-x buffer layer with a linearly graded Ge concentration profile. The mobility of the two-dimensional electron gas as determined from Hall measurements was 1600 cm2/V s at 300 K and 96 000 cm2/V s at 4.2 K. Recently, a 4.2 K mobility of 125 000 cm 2/V s was observed from a similar sample.
UR - http://www.scopus.com/inward/record.url?scp=36449003379&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36449003379&partnerID=8YFLogxK
U2 - 10.1063/1.106246
DO - 10.1063/1.106246
M3 - Article
AN - SCOPUS:36449003379
VL - 59
SP - 1611
EP - 1613
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
ER -