Fabrication and characterization of metal-molecule-silicon devices

Adina Scott, David B. Janes, Chad Risko, Mark A Ratner

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.

Original languageEnglish
Article number033508
JournalApplied Physics Letters
Volume91
Issue number3
DOIs
Publication statusPublished - 2007

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fabrication
silicon
metals
molecules
depletion
dipole moments
salts
orbitals
electric potential
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication and characterization of metal-molecule-silicon devices. / Scott, Adina; Janes, David B.; Risko, Chad; Ratner, Mark A.

In: Applied Physics Letters, Vol. 91, No. 3, 033508, 2007.

Research output: Contribution to journalArticle

Scott, Adina ; Janes, David B. ; Risko, Chad ; Ratner, Mark A. / Fabrication and characterization of metal-molecule-silicon devices. In: Applied Physics Letters. 2007 ; Vol. 91, No. 3.
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