Abstract
Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.
Original language | English |
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Article number | 033508 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)