Abstract
Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.
| Original language | English |
|---|---|
| Article number | 033508 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2007 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Fabrication and characterization of metal-molecule-silicon devices. / Scott, Adina; Janes, David B.; Risko, Chad; Ratner, Mark A.
In: Applied Physics Letters, Vol. 91, No. 3, 033508, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and characterization of metal-molecule-silicon devices
AU - Scott, Adina
AU - Janes, David B.
AU - Risko, Chad
AU - Ratner, Mark A
PY - 2007
Y1 - 2007
N2 - Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.
AB - Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.
UR - http://www.scopus.com/inward/record.url?scp=34547234080&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547234080&partnerID=8YFLogxK
U2 - 10.1063/1.2750516
DO - 10.1063/1.2750516
M3 - Article
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 033508
ER -