Fabrication and characterization of metal-molecule-silicon devices

Adina Scott; David B. Janes; Chad Risko; Mark A. Ratner

doi:10.1063/1.2750516

Fabrication and characterization of metal-molecule-silicon devices

Adina Scott, David B. Janes, Chad Risko, Mark A. Ratner

Northwestern University

Research output: Contribution to journal › Article

42 Citations (Scopus)

Abstract

Metal-molecule-silicon (MMSi) devices have been fabricated, electrically characterized, and analyzed. Molecular layers were grafted to n and p+ silicon by electrochemical reduction of para-substituted aryl-diazonium salts and characterized using standard surface analysis techniques; MMSi devices were then fabricated using traditional silicon (Si) processing methods combined with this surface modification. The measured current-voltage characteristics were strongly dependent on both substrate type and molecular head group. The device behavior was analyzed using a qualitative model considering semiconductor depletion effects and molecular dipole moments and frontier orbital energies.

Original language	English
Article number	033508
Journal	Applied Physics Letters
Volume	91
Issue number	3
DOIs	https://doi.org/10.1063/1.2750516
Publication status	Published - Aug 1 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Scott, A., Janes, D. B., Risko, C., & Ratner, M. A. (2007). Fabrication and characterization of metal-molecule-silicon devices. Applied Physics Letters, 91(3), [033508]. https://doi.org/10.1063/1.2750516

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