Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers

Amanda M. Shing, Naomi C. Coronel, Nathan S Lewis, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
Publication statusPublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015 → Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/15 → 6/19/15

Fingerprint

Nitrides
Fabrication
Optoelectronic devices
Earth (planet)
Semiconductor materials
Thin films

Keywords

  • absorber material
  • nitrides
  • reactive RF sputtering
  • thin-films
  • tunable band gap materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shing, A. M., Coronel, N. C., Lewis, N. S., & Atwater, H. A. (2015). Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355918] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355918

Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. / Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S; Atwater, Harry A.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355918.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shing, AM, Coronel, NC, Lewis, NS & Atwater, HA 2015, Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355918, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355918
Shing AM, Coronel NC, Lewis NS, Atwater HA. Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355918 https://doi.org/10.1109/PVSC.2015.7355918
Shing, Amanda M. ; Coronel, Naomi C. ; Lewis, Nathan S ; Atwater, Harry A. / Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
@inproceedings{e157b92da6ea4ea6a93770f8f1c53d03,
title = "Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers",
abstract = "The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.",
keywords = "absorber material, nitrides, reactive RF sputtering, thin-films, tunable band gap materials",
author = "Shing, {Amanda M.} and Coronel, {Naomi C.} and Lewis, {Nathan S} and Atwater, {Harry A.}",
year = "2015",
month = "12",
day = "14",
doi = "10.1109/PVSC.2015.7355918",
language = "English",
isbn = "9781479979448",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers

AU - Shing, Amanda M.

AU - Coronel, Naomi C.

AU - Lewis, Nathan S

AU - Atwater, Harry A.

PY - 2015/12/14

Y1 - 2015/12/14

N2 - The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.

AB - The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.

KW - absorber material

KW - nitrides

KW - reactive RF sputtering

KW - thin-films

KW - tunable band gap materials

UR - http://www.scopus.com/inward/record.url?scp=84961675524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961675524&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7355918

DO - 10.1109/PVSC.2015.7355918

M3 - Conference contribution

SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

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