Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers

Amanda M. Shing, Naomi C. Coronel, Nathan S Lewis, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
Publication statusPublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

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Keywords

  • absorber material
  • nitrides
  • reactive RF sputtering
  • thin-films
  • tunable band gap materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shing, A. M., Coronel, N. C., Lewis, N. S., & Atwater, H. A. (2015). Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355918] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355918