Abstract
The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781479979448 |
| DOIs | |
| Publication status | Published - Dec 14 2015 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015 |
Other
| Other | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Country | United States |
| City | New Orleans |
| Period | 6/14/15 → 6/19/15 |
Fingerprint
Keywords
- absorber material
- nitrides
- reactive RF sputtering
- thin-films
- tunable band gap materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. / Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S; Atwater, Harry A.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355918.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers
AU - Shing, Amanda M.
AU - Coronel, Naomi C.
AU - Lewis, Nathan S
AU - Atwater, Harry A.
PY - 2015/12/14
Y1 - 2015/12/14
N2 - The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.
AB - The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.
KW - absorber material
KW - nitrides
KW - reactive RF sputtering
KW - thin-films
KW - tunable band gap materials
UR - http://www.scopus.com/inward/record.url?scp=84961675524&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961675524&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2015.7355918
DO - 10.1109/PVSC.2015.7355918
M3 - Conference contribution
AN - SCOPUS:84961675524
SN - 9781479979448
BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -