Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers

Amanda M. Shing; Naomi C. Coronel; Nathan S Lewis; Harry A. Atwater

doi:10.1109/PVSC.2015.7355918

Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers

Amanda M. Shing, Naomi C. Coronel, Nathan S Lewis, Harry A. Atwater

California Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355918
Publication status	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

absorber material
nitrides
reactive RF sputtering
thin-films
tunable band gap materials

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7355918

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Shing, A. M., Coronel, N. C., Lewis, N. S., & Atwater, H. A. (2015). Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355918] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355918

Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. / Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S; Atwater, Harry A.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355918.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shing, AM, Coronel, NC, Lewis, NS & Atwater, HA 2015, Fabrication and characterization of ZnSnxGe1-xN2 alloys for light absorbers. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355918, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355918

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abstract = "The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.",

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AB - The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.

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