Abstract
The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.
Original language | English |
---|---|
Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781479979448 |
DOIs | |
Publication status | Published - Dec 14 2015 |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015 |
Other
Other | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
---|---|
Country | United States |
City | New Orleans |
Period | 6/14/15 → 6/19/15 |
Keywords
- absorber material
- nitrides
- reactive RF sputtering
- thin-films
- tunable band gap materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials