Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode

G. Pirio, P. Legagneux, D. Pribat, K. B K Teo, Manish Chhowalla, G. A J Amaratunga, W. I. Milne

Research output: Contribution to journalArticle

189 Citations (Scopus)

Abstract

We report on the fabrication of field emission microcathodes which use carbon nanotubes as the field emission source. The devices incorporated an integrated gate electrode in order to achieve truly low-voltage field emission. A single-mask, self-aligned technique was used to pattern the gate, insulator and catalyst for nanotube growth. Vertically-aligned carbon nanotubes were then grown inside the gated structure by plasma-enhanced chemical vapour deposition. Our self-aligned fabrication process ensured that the nanotubes were always centred with respect to the gate apertures (2 μm diameter) over the entire device. In order to obtain reproducible emission characteristics and to avoid degradation of the device, it was necessary to operate the gate in a pulsed voltage mode with a low duty cycle. The field emission device exhibited an initial turn-on voltage of 9 V. After the first measurements, the turn-on voltage shifted to 15 V, and a peak current density of 0.6 mA cm-2 at 40 V was achieved, using a duty cycle of 0.5%.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalNanotechnology
Volume13
Issue number1
DOIs
Publication statusPublished - Feb 2002

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Carbon Nanotubes
Field emission
field emission
Carbon nanotubes
carbon nanotubes
Fabrication
Electrodes
fabrication
electrodes
Electric potential
Nanotubes
nanotubes
electric potential
cycles
Plasma enhanced chemical vapor deposition
low voltage
Masks
Current density
masks
apertures

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode. / Pirio, G.; Legagneux, P.; Pribat, D.; Teo, K. B K; Chhowalla, Manish; Amaratunga, G. A J; Milne, W. I.

In: Nanotechnology, Vol. 13, No. 1, 02.2002, p. 1-4.

Research output: Contribution to journalArticle

Pirio, G. ; Legagneux, P. ; Pribat, D. ; Teo, K. B K ; Chhowalla, Manish ; Amaratunga, G. A J ; Milne, W. I. / Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode. In: Nanotechnology. 2002 ; Vol. 13, No. 1. pp. 1-4.
@article{070e1bcd069a4348a4798d1f75032403,
title = "Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode",
abstract = "We report on the fabrication of field emission microcathodes which use carbon nanotubes as the field emission source. The devices incorporated an integrated gate electrode in order to achieve truly low-voltage field emission. A single-mask, self-aligned technique was used to pattern the gate, insulator and catalyst for nanotube growth. Vertically-aligned carbon nanotubes were then grown inside the gated structure by plasma-enhanced chemical vapour deposition. Our self-aligned fabrication process ensured that the nanotubes were always centred with respect to the gate apertures (2 μm diameter) over the entire device. In order to obtain reproducible emission characteristics and to avoid degradation of the device, it was necessary to operate the gate in a pulsed voltage mode with a low duty cycle. The field emission device exhibited an initial turn-on voltage of 9 V. After the first measurements, the turn-on voltage shifted to 15 V, and a peak current density of 0.6 mA cm-2 at 40 V was achieved, using a duty cycle of 0.5{\%}.",
author = "G. Pirio and P. Legagneux and D. Pribat and Teo, {K. B K} and Manish Chhowalla and Amaratunga, {G. A J} and Milne, {W. I.}",
year = "2002",
month = "2",
doi = "10.1088/0957-4484/13/1/301",
language = "English",
volume = "13",
pages = "1--4",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode

AU - Pirio, G.

AU - Legagneux, P.

AU - Pribat, D.

AU - Teo, K. B K

AU - Chhowalla, Manish

AU - Amaratunga, G. A J

AU - Milne, W. I.

PY - 2002/2

Y1 - 2002/2

N2 - We report on the fabrication of field emission microcathodes which use carbon nanotubes as the field emission source. The devices incorporated an integrated gate electrode in order to achieve truly low-voltage field emission. A single-mask, self-aligned technique was used to pattern the gate, insulator and catalyst for nanotube growth. Vertically-aligned carbon nanotubes were then grown inside the gated structure by plasma-enhanced chemical vapour deposition. Our self-aligned fabrication process ensured that the nanotubes were always centred with respect to the gate apertures (2 μm diameter) over the entire device. In order to obtain reproducible emission characteristics and to avoid degradation of the device, it was necessary to operate the gate in a pulsed voltage mode with a low duty cycle. The field emission device exhibited an initial turn-on voltage of 9 V. After the first measurements, the turn-on voltage shifted to 15 V, and a peak current density of 0.6 mA cm-2 at 40 V was achieved, using a duty cycle of 0.5%.

AB - We report on the fabrication of field emission microcathodes which use carbon nanotubes as the field emission source. The devices incorporated an integrated gate electrode in order to achieve truly low-voltage field emission. A single-mask, self-aligned technique was used to pattern the gate, insulator and catalyst for nanotube growth. Vertically-aligned carbon nanotubes were then grown inside the gated structure by plasma-enhanced chemical vapour deposition. Our self-aligned fabrication process ensured that the nanotubes were always centred with respect to the gate apertures (2 μm diameter) over the entire device. In order to obtain reproducible emission characteristics and to avoid degradation of the device, it was necessary to operate the gate in a pulsed voltage mode with a low duty cycle. The field emission device exhibited an initial turn-on voltage of 9 V. After the first measurements, the turn-on voltage shifted to 15 V, and a peak current density of 0.6 mA cm-2 at 40 V was achieved, using a duty cycle of 0.5%.

UR - http://www.scopus.com/inward/record.url?scp=0036471486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036471486&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/13/1/301

DO - 10.1088/0957-4484/13/1/301

M3 - Article

AN - SCOPUS:0036471486

VL - 13

SP - 1

EP - 4

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 1

ER -