Fabrication of carbon nanotube lateral field emitters

S. B. Lee, A. S. Teh, K. B.K. Teo, M. Chhowalla, D. G. Hasko, W. I. Milne, G. A.J. Amaratunga, H. Ahmed

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38 Citations (Scopus)

Abstract

We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11-17 V. The device has high geometrical enhancement factors (9.3 × 106 cm-1) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (<1 μm). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices.

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalNanotechnology
Volume14
Issue number2
DOIs
Publication statusPublished - Feb 1 2003

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ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Lee, S. B., Teh, A. S., Teo, K. B. K., Chhowalla, M., Hasko, D. G., Milne, W. I., Amaratunga, G. A. J., & Ahmed, H. (2003). Fabrication of carbon nanotube lateral field emitters. Nanotechnology, 14(2), 192-195. https://doi.org/10.1088/0957-4484/14/2/318