Abstract
Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.
| Original language | English |
|---|---|
| Pages (from-to) | 55-60 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 730 |
| Publication status | Published - Dec 1 2002 |
| Event | Materials for Energy Storage, Generation and Transport - San Francisco, CA, United States Duration: Apr 2 2002 → Apr 4 2002 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Mu, R., Wu, M. H., Liu, Y. C., Ueda, A., Henderson, D. O., Hmelo, A. B., Feldman, L. C., & Hepp, A. (2002). Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition. Materials Research Society Symposium - Proceedings, 730, 55-60.