Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition

R. Mu; M. H. Wu; Y. C. Liu; A. Ueda; D. O. Henderson; A. B. Hmelo; L. C. Feldman; A. Hepp

doi:10.1557/proc-730-v3.4

Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition

R. Mu, M. H. Wu, Y. C. Liu, A. Ueda, D. O. Henderson, A. B. Hmelo, L. C. Feldman, A. Hepp

Rutgers University

Research output: Contribution to journal › Conference article

Abstract

Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.

Original language	English
Pages (from-to)	55-60
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	730
DOIs	https://doi.org/10.1557/proc-730-v3.4
Publication status	Published - Jan 1 2002
Event	Materials for Energy Storage, Generation and Transport - San Francisco, CA, United States Duration: Apr 2 2002 → Apr 4 2002

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Mu, R., Wu, M. H., Liu, Y. C., Ueda, A., Henderson, D. O., Hmelo, A. B., Feldman, L. C., & Hepp, A. (2002). Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition. Materials Research Society Symposium - Proceedings, 730, 55-60. https://doi.org/10.1557/proc-730-v3.4

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title = "Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition",

abstract = "Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.",

author = "R. Mu and Wu, {M. H.} and Liu, {Y. C.} and A. Ueda and Henderson, {D. O.} and Hmelo, {A. B.} and Feldman, {L. C.} and A. Hepp",

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doi = "10.1557/proc-730-v3.4",

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T1 - Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition

AU - Mu, R.

AU - Wu, M. H.

AU - Liu, Y. C.

AU - Ueda, A.

AU - Henderson, D. O.

AU - Hmelo, A. B.

AU - Feldman, L. C.

AU - Hepp, A.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.

AB - Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.

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VL - 730

SP - 55

EP - 60

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Materials for Energy Storage, Generation and Transport

Y2 - 2 April 2002 through 4 April 2002

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