Abstract
Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | R.B. Schwarz, G. Ceder, S.A. Ringel |
| Pages | 55-60 |
| Number of pages | 6 |
| Volume | 730 |
| Publication status | Published - 2002 |
| Event | Materials for Energy Storage, Generation and Transport - San Francisco, CA, United States Duration: Apr 2 2002 → Apr 4 2002 |
Other
| Other | Materials for Energy Storage, Generation and Transport |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/2/02 → 4/4/02 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition. / Mu, R.; Wu, M. H.; Liu, Y. C.; Ueda, A.; Henderson, D. O.; Hmelo, A. B.; Feldman, Leonard C; Hepp, A.
Materials Research Society Symposium - Proceedings. ed. / R.B. Schwarz; G. Ceder; S.A. Ringel. Vol. 730 2002. p. 55-60.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition
AU - Mu, R.
AU - Wu, M. H.
AU - Liu, Y. C.
AU - Ueda, A.
AU - Henderson, D. O.
AU - Hmelo, A. B.
AU - Feldman, Leonard C
AU - Hepp, A.
PY - 2002
Y1 - 2002
N2 - Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.
AB - Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.
UR - http://www.scopus.com/inward/record.url?scp=0036995049&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036995049&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0036995049
VL - 730
SP - 55
EP - 60
BT - Materials Research Society Symposium - Proceedings
A2 - Schwarz, R.B.
A2 - Ceder, G.
A2 - Ringel, S.A.
ER -