Abstract
The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ∼82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.
| Original language | English |
|---|---|
| Pages (from-to) | 378-384 |
| Number of pages | 7 |
| Journal | Nature Nanotechnology |
| Volume | 2 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 2007 |
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ASJC Scopus subject areas
- Bioengineering
- Biomedical Engineering
- Materials Science(all)
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. / Ju, Sanghyun; Facchetti, Antonio; Xuan, Yi; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Zhou, Chongwu; Marks, Tobin J.; Janes, David B.
In: Nature Nanotechnology, Vol. 2, No. 6, 06.2007, p. 378-384.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
AU - Ju, Sanghyun
AU - Facchetti, Antonio
AU - Xuan, Yi
AU - Liu, Jun
AU - Ishikawa, Fumiaki
AU - Ye, Peide
AU - Zhou, Chongwu
AU - Marks, Tobin J.
AU - Janes, David B.
PY - 2007/6
Y1 - 2007/6
N2 - The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ∼82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.
AB - The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ∼82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.
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U2 - 10.1038/nnano.2007.151
DO - 10.1038/nnano.2007.151
M3 - Article
VL - 2
SP - 378
EP - 384
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 6
ER -