Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Sanghyun Ju, Antonio Facchetti, Yi Xuan, Jun Liu, Fumiaki Ishikawa, Peide Ye, Chongwu Zhou, Tobin J. Marks, David B. Janes

Research output: Contribution to journalArticle

435 Citations (Scopus)

Abstract

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In 2 O 3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ∼82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Original languageEnglish
Pages (from-to)378-384
Number of pages7
JournalNature nanotechnology
Volume2
Issue number6
DOIs
Publication statusPublished - Jun 2007

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ASJC Scopus subject areas

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Ju, S., Facchetti, A., Xuan, Y., Liu, J., Ishikawa, F., Ye, P., Zhou, C., Marks, T. J., & Janes, D. B. (2007). Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature nanotechnology, 2(6), 378-384. https://doi.org/10.1038/nnano.2007.151